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BZT52C20-V 데이터시트 PDF




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부품번호 BZT52C20-V 기능
기능 Small Signal Zener Diodes
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BZT52C20-V 데이터시트, 핀배열, 회로
Small Signal Zener Diodes
BZT52-V-Series
Vishay Semiconductors
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common cathode
configuration in the SOT-23 case with type
designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Zener current see table
" Characteristics "
Power dissipation
Power dissipation
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
Ptot
Ptot
Symbol
RthJA
TJ
TS
17431
Value
500 2)
410 1)
Unit
mW
mW
Value
300 1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
1




BZT52C20-V pdf, 반도체, 판매, 대치품
BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Figure 1. Forward characteristics
1V
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
100
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Figure 4. Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF
1000
7
Ctot
5
4
3
VR = 1 V
2
V =2V
R
TJ = 25 °C
100
7 V =1V
R
5
4
VR = 2 V
3
2
10
1
18118
2 3 45
10 2 3 4 5 100 V
V at I = 5 mA
ZZ
Figure 5. Capacitance vs. Zener Voltage
°C/W
103
7
RthA
5
4
3
2
0.5
102 0.2
7 0.1
5
4 0.05
3 0.02
2 0.01
10
7
5
4
3
2
V=0
1
10-5 10-4
10-3
18116
tp tp
T
T
10-2 10-1
tp
PI
1 10s
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1
18119
2
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
4

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BZT52C20-V 전자부품, 판매, 대치품
BZT52-V-Series
Vishay Semiconductors
18157
Figure 18. Breakdown Characteristics
Package Dimensions in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
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