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PDF SSF4N60 Data sheet ( Hoja de datos )
| Número de pieza | SSF4N60 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
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SSF4N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Vdss = 600V
Id = 4A
Rdson = 2.3Ω (typ.)
Description
The SSF4N60 is a new generation of high voltage N–Channel
enhancement mode power MOSFETs and is obtained through
an extreme optimization layout design, in additional to pushing
on-resistance significantly down, special care is taken to ensure
a very good dv/dt capability, provide superior switching
performance, withstand high energy pulse in the avalanche, and
increases packing density.
Application
■ High current, high speed switching
■ Lighting
■ Ideal for off-line power supply, adaptor, PFC
SSF4N60 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous Drain Current,VGS@10V
ID@Tc=100ْC Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=25ْC
Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR
Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
4
2.2
16
80
0.67
±30
90
4
8.5
4.5
–55 to +150
Units
A
W
W/ Cْ
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.56
—
62.5
Units
ْC/W
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page 1of6
1 page  
Test Circuit and Waveform
SSF4N60
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSF4N60.PDF ] | |
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