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Número de pieza | MFE212 | |
Descripción | DUAL GATE MOSFETS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MFE212 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MFE211-MFE212
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFETS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Drain Source Voltage
Drain Gate Voltage
Gate Current
Drain Current – Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Storage Channel Temperature Range
Junction Temperature Range
Lead Temperature, 1/16” from Seated Surface for 10 Seconds
Symbol
VDSX
VDG1
VDG2
IG1
IG2
ID
PD
PD
Tstg
TJ
TL
Value
20
35
35
±10
±10
50
360
2.4
1.2
8.0
-65 to +200
-65 to +175
300
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Drain Source Breakdown Voltage
(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)
Gate 1 – Source Breakdown Voltage (1)
(IG1 = ±10 mAdc, VG2S = VDS = 0)
Gate 2 – Source Breakdown Voltage (1)
(IG2 = ±10 mAdc, VG1S = VDS = 0)
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
Gate 1 to Source Cutoff Voltage
(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µAdc)
MFE211
MFE212
VG1S(off)
Gate 2 to Source Cutoff Voltage
(VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc)
MFE211
MFE212
VG2S(off)
Gate 1 Leakage Current
(VG1S = ±5.0 Vdc, VG2S = VDS = 0)
(VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C)
IG1SS
Gate 2 Leakage Current
(VG2S = ±5.0 Vdc, VG1S = VDS = 0)
(VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C)
IG2SS
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current (2)
(VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc)
IDSS
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance (3)
(VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Yfs
Crss
Min
20
±6.0
±6.0
-0.5
-0.5
-0.2
-0.2
-
-
-
-
6.0
17
0.005
Max
-
-
-
-5.5
-4.0
-2.5
-4.0
±10
-10
±10
-10
40
40
0.05
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
°C
°C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
µAdc
nAdc
µAdc
mAdc
mmhos
pF
Rev. 20120705
1 page High-reliability discrete products
and engineering services since 1977
MFE211-MFE212
DUAL GATE MOSFETS
Rev. 20120705
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MFE212.PDF ] |
Número de pieza | Descripción | Fabricantes |
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MFE212 | (MFE211 / MFE212) N-Channel Dual Gate MOS Field Effect Transistors | Motorola Semiconductors |
MFE212 | DUAL GATE MOSFETS | Digitron Semiconductors |
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