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1N4148W PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 1N4148W
기능 SOD-123 Plastic-Encapsulate Diodes
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1N4148W 데이터시트, 핀배열, 회로
WILLASSOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1N4148WFM120-M+
BAV16WFM1T2H0R0U-M+
SOD-123+ PACKAGE
FAST SWITCHING DIODE
Features
FEATURBEatSch process design, excellent power dissipation offers
Package outline
SOD-123
z Fasbt eSttweritrcehveinrsgeSlepaekeagde current and thermal resistance.
Low profile surface mounted application in order to
z SurfoapctiemiMzeobuonatrdPsapcakcae.ge Ideally Suited for Automatic Insertion
SOD-123H
+
z ForLGowenpeowraelr Ploussrp, hoisgeh eSffwiciitecnhciyn. g Applications
High current capability, low forward voltage drop.
z HighHiCghosnudrguecctaanpacbeility.
z Pb-GFuraeredrpinagcfokraogveerviosltaagveapirloatbecletion.
0.146(3.7)
0.130(3.3)
RoHUSltraphroigdhu-scpteefodrswpaitcchkiningg. code suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
HaloLegaedn-frfereepeaprtrsomdeuect tenfovirropnamceknitnagl stcaonddaerdssuofffix “H”
MARKINRMGoIHL:-SSBpTArDoVd-1u1c96t5fW0o0r =p/2aTc26k8i,n1gNc4od1e4s8uWffix="TG4"
Pb Free Product
0.012(0.3) Typ.
0.071(1.8)
-0.056(1.4)
Halogen free product for packing code suffix "H"
MaximMumecRhatainngiscaanl ddaEtleactrical Characteristics, Single Diode @Ta=25
Epoxy : UL94-V0 rated flame retardant
Case
:
Parameter
Molded plastic,
SOD-123H
Symbol
Non-RepTeertmitiivnealPs e:PalkatRedevteerrmseinValosl,tsaogleder
abl
e
pVeRr MM
I
L
-STD-7
,
50
Limit
0.031(0.8) Typ.
100
0.040(1.0)
0.024(0.6)
Unit
0.031(0.8) Typ.
V
Peak Repetitive PeMaekthRoedv2e0r2s6e Voltage
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
Mounting Position : Any
DC BlocWkienigghtV:oAltpapgroeximated 0.011 gram
VRRM
VRWM
VR
Dimensions in inches and (millimeters)
75 V
RMS Reverse Voltage
VR(RMS)
53
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
FRoartiwngasrdat C25ontianmuobiuenst Cteumrpreernatture unless otherwisIeFMspecified.
300
V
mA
ASvinegrleagpheaRseechatilfiwedavOe,u6t0pHuzt, Creusrisrteivnetof inductive loaIOd. 150 mA
 
For capacitive load, derate current
Peak Forward Surge Current
@byt2=01%.0μs
Marking Code
RATINGS
@t =1.0s
2.0
SYIFMSBMOL
FM120-MH
FM130-MH FM140-MH
FM150-MH
1.0
FM160-MH
FM180-MH
FM1100-MH
FAM1150-MH FM1200-MH
UN
12 13
14 15
16
18 10
115 120
MPaoxwimeurmDRisecsuirpreanttioPneak Reverse Voltage
VPRRdM
20
30
40 55000 60
80
100 mW150
200 Vol
MTahxeimrmumalRRMeSsVisolttaagnece from Junction
Maximum DC Blocking Voltage
to Ambient
Maximum Average Forward Rectified Current
  Junction Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
sSutpoerrimagpoeseTdeomn rpaeterdaltouadre(JEDEC method)
Typical Thermal Resistance (Note 2)
ETlyepcictarl iJcunacltioRnaCtainpagcistan@ceT(Nao=te215)
Operating Temperature Range
VRMS
RVDθJCA
IO
  Tj
IFSM
TSTG
RΘJA
CJ
TJ
14 21
28 35
42
20 30 40 25500 60
 
 
-55 to +125
150
-55~+150
 
1.0
 
30
40
120
56 70
105
80 100 /W150
 
 
-55 to +150
140
200
 
Volt
Volt
Am
Am
℃/W
PF
Storage TemperatPuraerRaamnegeter
 
CHARACTERISTICS
SyTmSbTGol Min Typ Max Unit - 65 to +175 Conditions
SVYFM1BOL FM120-MH FM130-MH FM1400.-7M1H5FM150-MVH FM160-MH FM180-MHIFF=M11m10A0-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
MFaoxrimwuamrdAvveoraltgaegReeverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VFV2F
VFI3R
0.50 0.855
1.0
0V.70
0.5
V 10
0IF.8=510mA
IF=50mA
0.9
0.92
 
Vol
mAm
 
NOTES:
VF4
1.25 V
IF=150mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDCIR. 1
2R- TehveermrsaleRcesuisrtraencnet From Junction to Ambient
  IR2
 
Capacitance between terminals
CT
1 μA
25 nA
2 pF
VR=75V
VR=20V
VR=0V,f=1MHz
Reverse recovery time
trr
4 ns
IF=IR=10mA
Irr=0.1XIR,RL=100
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.






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