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Datasheet BSS84 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BSS84P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET V(BR)DSS RDS(on)MAX ID -50 V  8Ω@-10V  10Ω@ -5V   -0.13A   DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use
JCET
JCET		mosfet
2BSS84P-CHANNEL MOSFET

BSS84 Rev.D Nov.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 沟道 MOS 场效应管。P-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 低开启电压，C-MOS 和 TTL 等电路的直接接口，开关速度快。 Low threshold voltage, Direct interface to C-MOS, T
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS		mosfet
3BSS84P-Channel 20-V (D-S) MOSFET

BSS84 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered
Bruckewell
Bruckewell		mosfet
4BSS84Small Signal MOSFET

BSS84 Small Signal MOSFET P-Channel 3 DRAIN Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns 1 GATE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Managemen
WEITRON
WEITRON		mosfet
5BSS84P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS trans
NXP Semiconductors
NXP Semiconductors		transistor


BSS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BSS100SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S2
Siemens Semiconductor Group
Siemens Semiconductor Group		transistor
2BSS100N-Channel Logic Level Enhancement Mode Field Effect Transistor

September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces
Fairchild Semiconductor
Fairchild Semiconductor		transistor
3BSS101SIPMOS Small-Signal Transistor

BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S493 Q62702-S636 Tape and Re
Siemens Semiconductor
Siemens Semiconductor		transistor
4BSS110P-Channel Enhancement Mode Field Effect Transistor

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st
Fairchild Semiconductor
Fairchild Semiconductor		transistor
5BSS110SIPMOS Small-Signal Transistor

BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67
Siemens Semiconductor
Siemens Semiconductor		transistor
6BSS110P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor F
NXP Semiconductors
NXP Semiconductors		transistor
7BSS119SIPMOS Small-Signal Transistor (N channel Enhancement mode)

BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings
Siemens Semiconductor Group
Siemens Semiconductor Group		transistor



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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