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PDF BT139-600 Data sheet ( Hoja de datos )
| Número de pieza | BT139-600 | |
| Descripción | Triacs logic level | |
| Fabricantes | EAST SEMICONDUCTOR | |
| Logotipo |  |
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EAST
SEMICONDUCTOR
Triacs logic level
GENERAL DESCRIPTION
Passivated, sensitive gate triac in a plastic envelope,
intended for use in general purpose bidirectional
switching and phase control applications. This device
is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low
power gate trigger circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Symbol Typ Unit
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
VDRM
VRRM
IT(RMS)
ITSM
600
16.0
140
V
A
A
Tj 110 ℃
Tstg -45~150 ℃
123
1: T1
2: T2
3: G
Tab:T2
Product specification
BT139-600
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
VDRM
VRRM
ID=0.1mA
600 —
—V
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
T2-G+
T2+G+
IT(RMS) full sine wave; Tmb ≤107 ℃ — 16.0 — A
VT IT= 20A
IH VD = 12 V; IGT = 0.1 A
— 1.3 1.7 V
— 4.0 30 mA
— 2.5 10
IGT VD = 12 V; IT = 0.1 A
— 4.0 10
mA
— 5.0 10
— 11 25
— 3.2 30
Latching
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
IL VD = 12 V; IGT = 0.1 A
VGT VD = 12 V; IT = 0.1 A
— 16 40
mA
— 4.0 30
— 5.5 40
— 0.7 1.5 V
EAST SEMICONDUCTOR CO., LTD
Phone: 86-510-83880883 Fax: 86-510-83883883
1 page | ||
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| PDF Descargar | [ Datasheet BT139-600.PDF ] | |
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