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부품번호 | YBS3006G 기능 |
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기능 | Glass Passivated Bridge Rectifier | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 5 페이지수
YBS3004G - YBS3007G
Taiwan Semiconductor
3A, 400V - 1000V Glass Passivated Bridge Rectifier
FEATURES
● Glass passivated junction
● Ideal for automated placement
● Reliable low cost construction utilizing molded
plastic technique
● High surge current capability
● UL Recognized File # E-326854
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
3
400 - 1000
110
150
YBS
A
V
A
°C
Configuration
Quad
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: YBS
● Molding compound meets UL 94V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.22g (approximately)
YBS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
YBS
YBS
3004G 3005G
YBS
3006G
Marking code on the device
YBS
3004G
YBS
3005G
YBS
3006G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
Surge peak forward current, 8.3 ms single
half sine-wave superimposed on rated load
Surge peak forward current, 1 ms single
half sine-wave superimposed on rated load
I2t value (of a surge on-state current)(1)
VRRM
VR(RMS)
IF(AV)
25°C
IFSM 125°C
25°C
IFSM 125°C
I2t
400
280
600 800
420 560
3
110
88
220
175
50
Junction temperature
Storage temperature
Note:
1. Pulse test with PW=8.3 ms single half sine-wave
TJ
TSTG
-55 to +150
-55 to +150
YBS
3007G
YBS
3007G
1000
700
UNIT
V
V
A
A
A
A2s
°C
°C
1 Version:B1703
PACKAGE OUTLINE DIMENSIONS
YBS3004G - YBS3007G
Taiwan Semiconductor
DIM Unit (mm)
Unit (inch)
Min Max Min Max
A 5.00 5.20 0.197 0.205
B 6.50 6.70 0.256 0.264
C 7.90 8.60 0.311 0.339
D 7.20 7.40 0.283 0.291
E 0.27 0.40 0.011 0.016
F 1.30 1.50 0.051 0.059
G 0.95 1.15 0.037 0.045
H 0.70 1.05 0.028 0.041
I 2.90 3.10 0.114 0.122
J 0.04 0.08 0.002 0.003
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Symbol
A
B
C
D
Unit (mm)
1.80
2.00
9.15
7.10
Unit (inch)
0.070
0.078
0.360
0.279
P/N = Marking Code
YW = Date Code
F = Factory Code
4 Version:B1703
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ YBS3006G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
YBS3006G | Glass Passivated Bridge Rectifier | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |