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PDF 2SC2712 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2712 | |
| Descripción | NPN Transistor | |
| Fabricantes | HOTTECH | |
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Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX)
Complementary to 2SA1162
2SC2712 (NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
60
VCEO
50
VEBO
5
IC 150
PC 200
TJ 150
Tstg -55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
VCBO IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO IC=1mA , IB=0
50
V
Emitter-base breakdown voltage
VEBO IE= 100μA, IC=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICB VCB= 60 V, IE=0
O
IEB VEB=5V, IC=0
O
hFE VCE=6V, IC=2mA
70
0.1 μA
0.1 μA
700
Collector-emitter saturation voltage
VCE(sat) IC= 100mA, IB=10mA
0.1 0.25
V
Transition frequency
fT VCE=10V, IC= 1mA
80
MHz
Output capacitance
Cob VCB=10V, IE=0,f=1 MHz
2.0 3.5 pF
Noise Figure
CLASSIFICATION OF hFE
Marking
LO
Range
70-140
NF VCE=6V,IC=0.1mA,f=1kH
z, Rg=10kΩ
LY
120-240
LG
200-400
1.0 10 dB
LL
350-700
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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| PDF Descargar | [ Datasheet 2SC2712.PDF ] | |
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