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BZX55B4V7 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BZX55B4V7
기능 Silicon Epitaxial Planar Z-Diodes
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BZX55B4V7 데이터시트, 핀배열, 회로
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Low noise
D Very high stability
D Available with tighter tolerances
D VZ–tolerance ± 2%
Applications
Voltage stabilization
BZX55B...
Vishay Telefunken
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85604
Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (6)




BZX55B4V7 pdf, 반도체, 판매, 대치품
BZX55B...
Vishay Telefunken
100
10
Tj = 25°C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8
VF – Forward Voltage ( V )
1.0
Figure 7. Forward Current vs. Forward Voltage
100
80
Ptot=500mW
Tamb=25°C
60
40
20
0
0
95 9604
4 8 12 16
VZ – Z-Voltage ( V )
20
Figure 8. Z–Current vs. Z–Voltage
1000
50
40
Ptot=500mW
Tamb=25°C
30
20
10
0
15 20 25 30 35
95 9607
VZ – Z-Voltage ( V )
Figure 9. Z–Current vs. Z–Voltage
1000
IZ=1mA
100
5mA
10 10mA
1 Tj = 25°C
0 5 10 15 20 25
95 9606
VZ – Z-Voltage ( V )
Figure 10. Differential Z–Resistance vs. Z–Voltage
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
tp/T=0.01
1
10–1
100
95 9603
Figure 11. Thermal Response
Single Pulse
DRTth=JAT=jm3a0x0–KTa/Wmb
iZM=(–VZ+(VZ2+4rzj DT/Zthp)1/2)/(2rzj)
101
tp – Pulse Length ( ms )
102
www.vishay.de FaxBack +1-408-970-5600
4 (6)
Document Number 85604
Rev. 3, 01-Apr-99

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