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부품번호 | BC817-25 기능 |
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기능 | 500mA NPN general-purpose transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 19 페이지수
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC817
SOT23
BC817W
SOT323
BC337[1]
SOT54 (TO-92)
JEITA
-
SC-70
SC-43A
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
BC807
BC807W
BC327
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
ICM
hFE
Quick reference data
Parameter
Conditions
collector-emitter voltage
collector current (DC)
open base;
IC = 10 mA
peak collector current
DC current gain
BC817; BC817W; BC337
IC = 100 mA;
VCE = 1 V
BC817-16; BC817-16W; BC337-16
BC817-25; BC817-25W; BC337-25
BC817-40; BC817-40W; BC337-40
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 45 V
-
-
[1] -
100
100
160
250
-
-
-
-
-
-
-
500 mA
1A
-
600
250
400
600
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC817
BC817W
BC337
storage temperature
junction temperature
ambient temperature
open emitter
open base;
IC = 10 mA
open collector
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
-
-
-
-
-
-
[1][2] -
[1][2] -
[1][2] -
−65
-
−65
Max Unit
50 V
45 V
5V
500 mA
1A
200 mA
250
200
625
+150
150
+150
mW
mW
mW
°C
°C
°C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC817
BC817W
BC337
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1][2] - - 500 K/W
[1][2] - - 625 K/W
[1][2] - - 200 K/W
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
BC817_BC817W_BC337_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 19
4페이지 NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
10
VBEsat
(V)
1
(1)
(2)
(3)
006aaa134
10
VBEsat
(V)
1
(1)
(2)
(3)
006aaa135
10−1
10−1
1
10 102 103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4.
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
10−1
10−1
1
10 102 103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5.
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
006aaa136
10
VBEsat
(V)
1 (1)
(2)
(3)
10−1
10−1
1
10 102 103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |