K6F4016R4G-F Datasheet PDF - Samsung semiconductor
| Part Number | K6F4016R4G-F | |
| Description | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
| Manufacturers | Samsung semiconductor | |
| Logo |  |
|
|
There is a preview and K6F4016R4G-F download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
Preview 1 page No Preview Available !
K6F4016R4G Family
Preliminary
CMOS SRAM
Document Title
www.DataSheet4U.com
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
Remark
November 14, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0
November 2003
|
| |
 
K6F4016R4G Family
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to VCC-0.2V
Input rising and falling time: 5ns
Input and output reference voltage:0.9V
Output load (See right): CL= 30pF+1TTL
AC CHARACTERISTICS ( TA=-40 to 85°C, Vcc=1.65~1.95V )
Parameter List
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
UB, LB Access Time
Chip select to low-Z output
UB, LB enable to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
UB, LB Valid to End of Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
Preliminary
CMOS SRAM
VTM3)
www.DataSheet4U.com
R12)
CL1)
R22)
1. Including scope and jig capacitance
2. R1=3070Ω, R2=3150Ω
3. VTM =1.8V
Speed Bins
70ns
85ns
Min Max Min Max
70 - 85 -
- 70 - 85
- 70 - 85
- 35 - 40
- 70 - 85
10 - 10 -
10 - 10 -
5-5-
0 25 0 25
0 25 0 25
0 25 0 25
10 - 10 -
70 - 85 -
60 - 70 -
0-0-
60 - 70 -
60 - 70 -
50 - 60 -
0-0-
0 20 0 25
30 - 35 -
0-0-
5-5-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
IDR
tSDR
tRDR
CS≥Vcc-0.2V1), VIN≥0V
Vcc=1.2V, CS≥Vcc-0.2V1), VIN≥0V
See data retention waveform
1. 1) CS≥Vcc-0.2V(CS controlled) or
2) LB=UB≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)
2. Typical value are measured at TA=25°C and not 100% tested.
Min Typ Max Unit
1.0 - 1.95 V
- 0.52) 3
µA
0-
tRC -
- ns
-
- 5 - Revision 0.0
November 2003
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6F4016R4G-F electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K6F4016R4G-F.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| K6F4016R4G-F | The function is 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM. Samsung semiconductor | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
K6F4
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||