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부품번호 | K6R4008V1B-C 기능 |
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기능 | 512K x8 Bit High Speed Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY
CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Design Target.
Draft Data
Jan. 1st, 1997
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item Previous
ICC
10ns
170mA
12ns
160mA
15ns
150mA
ISB f=max. 40mA
ISB1 f=0 10 / 1mA
IDR
VDR=3.0V
0.9mA
Current
205mA
200mA
195mA
50mA
10 / 1.2mA
1.0mA
Feb.11th.1998
Rev. 2.1
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
Icc
205/200/195mA
230/225/220mA
Jun.27th 1998
Rev. 2.2 Add 44 pins plastic TSOP(II) forward Package.
May. 4th 1999
Remark
Design Target
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.2
May 1999
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
3.0
0
2.0
-0.3**
Typ
3.3
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
PRELIMINARY
CMOS SRAM
Max
3.6
0
VCC+0.3***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
ISB
ISB1
VOL
VOH
Min. Cycle, CS=VIH
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤ 0.2V
IOL=8mA
IOH=-4mA
Min Max Unit
-2 2 µA
-2 2 µA
10ns
- 205 mA
12ns
- 200
15ns
- 195
- 50 mA
Normal
-
10 mA
L-Ver. - 1.2
- 0.4 V
2.4 -
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
MIN
-
-
Max
8
7
Unit
pF
pF
-4-
Rev 2.2
May 1999
4페이지 www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
OE
CS
WE
Data in
Data out
tWC
tAW
tCW(3)
tWR(5)
tAS(4)
tWP(2)
High-Z
tOHZ(6)
tDW tDH
Valid Data
High-Z(8)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
tWC
tAW
tCW(3)
tWP1(2)
tWR(5)
tWHZ(6)
tDW tDH
Valid Data
High-Z(8)
tOW (10) (9)
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)
Address
CS
tAS(4)
tWC
tAW
tCW(3)
tWP(2)
WE
Data in
Data out
High-Z
High-Z
tLZ tWHZ(6)
tWR(5)
tDW
Valid Data
tDH
High-Z
High-Z(8)
-7-
Rev 2.2
May 1999
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부품번호 | 상세설명 및 기능 | 제조사 |
K6R4008V1B-C | 512K x8 Bit High Speed Static RAM | Samsung semiconductor |
K6R4008V1B-I | 512K x8 Bit High Speed Static RAM | Samsung semiconductor |
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