Datasheet.kr   

K6R4008V1B-C 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6R4008V1B-C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K6R4008V1B-C 자료 제공

부품번호 K6R4008V1B-C 기능
기능 512K x8 Bit High Speed Static RAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K6R4008V1B-C 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 10 페이지수

미리보기를 사용할 수 없습니다

K6R4008V1B-C 데이터시트, 핀배열, 회로
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY
CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Design Target.
Draft Data
Jan. 1st, 1997
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item Previous
ICC
10ns
170mA
12ns
160mA
15ns
150mA
ISB f=max. 40mA
ISB1 f=0 10 / 1mA
IDR
VDR=3.0V
0.9mA
Current
205mA
200mA
195mA
50mA
10 / 1.2mA
1.0mA
Feb.11th.1998
Rev. 2.1
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
Icc
205/200/195mA
230/225/220mA
Jun.27th 1998
Rev. 2.2 Add 44 pins plastic TSOP(II) forward Package.
May. 4th 1999
Remark
Design Target
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.2
May 1999




K6R4008V1B-C pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
3.0
0
2.0
-0.3**
Typ
3.3
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA.
PRELIMINARY
CMOS SRAM
Max
3.6
0
VCC+0.3***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
ISB
ISB1
VOL
VOH
Min. Cycle, CS=VIH
f=0MHz, CSVCC-0.2V,
VINVCC-0.2V or VIN0.2V
IOL=8mA
IOH=-4mA
Min Max Unit
-2 2 µA
-2 2 µA
10ns
- 205 mA
12ns
- 200
15ns
- 195
- 50 mA
Normal
-
10 mA
L-Ver. - 1.2
- 0.4 V
2.4 -
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
MIN
-
-
Max
8
7
Unit
pF
pF
-4-
Rev 2.2
May 1999

4페이지










K6R4008V1B-C 전자부품, 판매, 대치품
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
OE
CS
WE
Data in
Data out
tWC
tAW
tCW(3)
tWR(5)
tAS(4)
tWP(2)
High-Z
tOHZ(6)
tDW tDH
Valid Data
High-Z(8)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
tWC
tAW
tCW(3)
tWP1(2)
tWR(5)
tWHZ(6)
tDW tDH
Valid Data
High-Z(8)
tOW (10) (9)
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)
Address
CS
tAS(4)
tWC
tAW
tCW(3)
tWP(2)
WE
Data in
Data out
High-Z
High-Z
tLZ tWHZ(6)
tWR(5)
tDW
Valid Data
tDH
High-Z
High-Z(8)
-7-
Rev 2.2
May 1999

7페이지


구       성 총 10 페이지수
다운로드[ K6R4008V1B-C.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
K6R4008V1B-C

512K x8 Bit High Speed Static RAM

Samsung semiconductor
Samsung semiconductor
K6R4008V1B-I

512K x8 Bit High Speed Static RAM

Samsung semiconductor
Samsung semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵