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PDF BAV70DW Data sheet ( Hoja de datos )
| Número de pieza | BAV70DW | |
| Descripción | Plastic-Encapsulate Diodes | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV70DW (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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WILLAS
S1O.0TA -S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR DREiCoTdIFeIEsRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAV70DTWHRU
FM1200-M+
Pb Free Product
SWITCHFIeNaGtuDrIOeDsE
FEATU•RBbEeaStttcehr
process
reverse
design,
leakage
excellent
current a
power diss
nd thermal
ipation offers
resistance.
z F•aLsotwSpwroifticlehsinugrfaScepemeodunted application in order to
optimize board space.
z U• lLtroaw-SpomwaelrlloSsusr,fhaigcheeMffiociuennct yP. ackage
z F•oHrigGhecnurereranlt cPauprapboilsitye, lSowwfitocrwhianrgd vAopltpagliecadrtioopn. s
z H•• iGHgiuhgahCrdsoruinrnggdeufoccartpoaavnebcrilveitoyl.tage protection.
z P•bU-Fltrraeheigpha-cskpeaegdesiwsitacvhainigla. ble
R•oSHilSicopnroedpuitacxt ifaolrpplaancakrinchgipc,omdeetaslusffiliixco”Gn ”junction.
H•aLleoagde-nfrefreepeaprtrsomduecett feonrvpiraocnkminegntaclosdteansduafrfdixs “oHf ”
z M• oRMiosIHLt-SuSrpTerDoSd-1euc9nt5sf0oit0ripv/2aitc2yk8inLgecvoedle1suffix "G"
Halogen free product for packing code suffix "H"
MAKINMGe: KchJAanical data
Maxim•uEmpoRxya:tUinLg9s4-V@0Traat=ed2f5la℃me retardant
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
termPinaarlasm, seoltdeerrable
per
,
MIL-STD-750
Peak Repetitive PMeaekthRoedv2e0r2s6e Voltage
Workin• gPoPleaariktyR: eInvdeicrsaeteVdoblytacgaethode band
DC Blo•cMkoinugntiVnog lPtaogseition : Any
Forwa•rdWCeoignhttin: AupopursoxCimurarteendt0.011 gram
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
6 5 4 0.056(1.4)
123
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limit
0.031(0.8) Typ.
Unit
VRRM
100
VRWM Dimensions in1in0c0hes and (millimetersV)
VR 75
IFM 300
mA
Average RectiMfieAdXOIMuUtpMutRCAurTrIeNnGt S AND ELECTRICAL CHARACTERISTIOICS
150
mA
NRaotnin-gRseapt e2t5i℃tiveamPbeiaekntFteomrwpearradturSeuurngleesCs uotrhreernwtise specified.@ t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
@ t = 1.0s
IFSM
1
A
For capacitive load, derate current by 20%
Power DissipationRATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MHPFDM150-MH
200
FM160-MH FM180-MH
mW
FM1100-MH FM1150-MH FM1200-MH
UN
MTahrkeirnmg Caol dReesistance Junction to Ambient
12 13 14 RθJA15 16 625 18
10 ℃/W 115
120
Maximum Recurrent Peak Reverse Voltage
MOapxiemruamtinRgMSJuVnolctatgioen Temperature
VRRM
20
30
40
50
60
80 100 150 200 Volt
VRMS
14
21
28 TJ 35
150
42 56
70 ℃ 105
140 Volt
MSatxoimraugmeDTCeBmlopcekirnagtVuorletage
VDC 20 30 40 TST5G0 60 -55~+18500 100℃ 150 200 Volt
Maximum Average Forward Rectified Current
IO
1.0 Am
EPLeaEk CFoTrwRarIdCSAurgLe CCuHrreAntR8.A3 mCsTsEingRleIhSaTlf sIiCneS-wa(vTea=2 IF5SM℃ unless otherwise specified)
30
superimposed on rated load (JEDEC method)
Typical ThermalPRaersaismtaencteer(Note 2)
Typical Junction Capacitance (Note 1)
RSΘyJAmbol
CJ
Te st conditions
M40in
120
OpReeravtienrgsTeembpreeraaktudreowRanngveoltage
TVJ (BR)
-55 to +IR1=252.5µA
75
M ax
-55 to +150
Unit
V
Am
℃/W
PF
℃
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
TSTG
IR
VR=75V
- 65 to +175
2.5
µA
℃
SYMBOL FM120-MH FM130-MHVFRM=12400-MVH FM150-MH FM160-MH FM180-M0H.F0M215100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.I5F0=1mA
0.70
0.78155
0.9 0.92 Volt
MaFxoimrwumarAdvevraogletaRgeeverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR VF
IF=10mA
IF=50mA
0.5 855 mV
10 1000
mAm
NOTES:
1- MJueanscurteiod nat c1 aMpHaZcaintadnapcpelied reverse voltage of 4.0 VDC.
Cj
IF=150mA
VR=0, f=1MHz
1250
2
pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
IF=IR=10mA,Irr=0.1×IR,
trr RL=100Ω
4 ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV70DW.PDF ] | |
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