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PDF BAV99DW Data sheet ( Hoja de datos )
| Número de pieza | BAV99DW | |
| Descripción | Plastic-Encapsulate Diode | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV99DW (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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WILLAS
S1O.0TA-S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR DREiCoTdIFeIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAV99DWTHRU
FM1200-M+
Pb Free Product
Features
SWITCH•IBNaGtchDpIrOocDeEss design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATUR•ELSow profile surface mounted application in order to
z F•aLosoptwtiSmpwiozweitecbrholaionrsdgs,sShpipagceheee.dfficiency.
z U• lHtriagh-Scmurraelnl tScuarpfaabcileityM, loowunfotrwPaarcdkvaogltaege drop.
z F•oHrigGhesnuregreacl aPpuabrpiliotys.e Switching Applications
• Guardring for overvoltage protection.
z H• iUglhtraChoignhd-supcetaedncsweitching.
z P• bS-iFlicroeneeppaitcakxiaagl pelainsaar vchaiipla, mbleetal silicon junction.
R• oLHeaSd-pfrreoedpuacrttsfomr epeatceknivnigrocnomdeentsaul sfftiaxn”dGa”rds of
MIL-STD-19500 /228
H• aRlooHgSenprofrdeuect pforropdaucckitnfgocropdaecskuifnfixg"Gco" de suffix “H”
z MoHiaslotguerne fSreeenpsroitdiuvcittyforLpeavcekiln1g code suffix "H"
Mechanical data
MAKING: KJG
Maximu•• mCEpaoRsexay:t:MiUnoLgld9se4d-@Vp0lTarAsat=tiec2d,5Sf℃lOamD
e retard
-123H
a
n
t
•
Terminals
:Plated
terPmainraalsm, seotlederrable
per
,
MIL-STD-750
Peak Repetitive PeMaekthreovde2r0s2e6voltage
Workin•gPPoelaarkityR:eIvnedricsaeteVdobltyagcaethode band
DC Blo•cMkionugntingVoPlotasgitieon : Any
Forwar•dWCeoignhtitn:uAopupsroCxiumraretendt 0.011 gram
Package outline
SOSOTD-3-16233H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limits
0.031(0.8) Typ.
Unit
VRRM
VRWM
VR
IFM
Dimensions in7i5nches and (millimeterVs)
300 mA
Average RectifMieAdXOIMutUpuMt CRuArTreINntGS AND ELECTRICAL CHARACTERISITOICS
150
mA
NRoanti-nRgsepate2ti5t℃iveaPmebaieknFt toermwpaerradtuSreurugnelesCsuortrheenrwt ise specified@. t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
IFSM
1
A
Power Dissipation RATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MHPFDM150-MH
200
FM160-MH FM180-MH
FM110m0-MWH
FM1150-MH FM1200-MH
UN
TMhaerkrinmgaCloRdeesistance Junction to Ambient Air
12 13 14 RθJA15 16 625 18
10℃/W 115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Vo
OMpaxeimrautminRgMJSuVnoclttaigoen Temperature
VRMS
14
21
28 TJ 35
42 150 56
70 ℃ 105
140 Vo
SMtaoxrimagume DteCmBploecrkaintguVreoltage
VDC
20
30
40 TSTG50
60-55-15080
100 ℃ 150
200 Vo
Maximum Average Forward Rectified Current
IO
1.0
EPLeEakCFTorRwaIrCd SAuLrgeCCHurrAenRt 8A.3CmTs sEinRgleIShaTlfIsCinSe-w(aTvae mb IF=SM25℃ unless otherwise specified)
30
superimposed on rated load (JEDEC method)
Typical ThermaPl Rareasimstaentceer (Note 2)
Typical Junction Capacitance (Note 1)
ORpeervaetinrgseTebmrpeearaktduroewRnanvgoeltage
RSΘyJmA bol
CJ
TVJ(BR) R
Te st conditions
-55 to +I1R2=52.5µA
M4I0N
120
75
M AX
UNIT
-55 to +150 V
Am
Am
℃/
P
℃
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
RFatoerdwDaCrdBlovcoklintaggVeoltage
NOTES:
@T A=25℃
@T A=125℃
TSTG
- 65 to +175
℃
VR=75V
2.5
IR µA
SYMBOL FM120-MH FM130-MHVFRM=12400V-MH FM150-MH FM160-MH FM180-M0H.0F2M51100-MH FM1150-MH FM1200-MH UN
VF
IRVF
0I.F5=01mA
IF=10mA
IF=50mA
0.70
0.5
10
07.8155
855
1000
0.9
mV
0.92
Vo
mA
IF=150mA
1250
1-JMuenascutrieodnatc1aMpHaZciatnadnacpeplied reverse voltage of 4.0 VDC. CT
VR=0, f=1MHz
2 pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
IF=IR=10mA,Irr=0.1×IR,
trr RL=100Ω
4 nS
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV99DW.PDF ] | |
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