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BAV99DW 데이터시트 PDF




WILLAS에서 제조한 전자 부품 BAV99DW은 전자 산업 및 응용 분야에서
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기능 Plastic-Encapsulate Diode
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BAV99DW 데이터시트, 핀배열, 회로
WILLAS
S1O.0TA-S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR DREiCoTdIFeIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAV99DWTHRU
FM1200-M+
Pb Free Product
Features
SWITCHIBNaGtchDpIrOocDeEss design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURELSow profile surface mounted application in order to
z FaLosoptwtiSmpwiozweitecbrholaionrsdgs,sShpipagceheee.dfficiency.
z UlHtriagh-Scmurraelnl tScuarpfaabcileityM, loowunfotrwPaarcdkvaogltaege drop.
z FoHrigGhesnuregreacl aPpuabrpiliotys.e Switching Applications
Guardring for overvoltage protection.
z HiUglhtraChoignhd-supcetaedncsweitching.
z PbS-iFlicroeneeppaitcakxiaagl pelainsaar vchaiipla, mbleetal silicon junction.
RoLHeaSd-pfrreoedpuacrttsfomr epeatceknivnigrocnomdeentsaul sfftiaxndGards of
MIL-STD-19500 /228
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z MoHiaslotguerne fSreeenpsroitdiuvcittyforLpeavcekiln1g code suffix "H"
Mechanical data
MAKING: KJG
Maximu•• mCEpaoRsexay:t:MiUnoLgld9se4d-@Vp0lTarAsat=tiec2d,5SflOamD
e retard
-123H
a
n
t
Terminals
:Plated
terPmainraalsm, seotlederrable
per
,
MIL-STD-750
Peak Repetitive PeMaekthreovde2r0s2e6voltage
WorkingPPoelaarkityR:eIvnedricsaeteVdobltyagcaethode band
DC BlocMkionugntingVoPlotasgitieon : Any
ForwardWCeoignhtitn:uAopupsroCxiumraretendt 0.011 gram
Package outline
SOSOTD-3-16233H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limits
0.031(0.8) Typ.
Unit
VRRM
VRWM
VR
IFM
Dimensions in7i5nches and (millimeterVs)
300 mA
Average RectifMieAdXOIMutUpuMt CRuArTreINntGS AND ELECTRICAL CHARACTERISITOICS
150
mA
NRoanti-nRgsepate2ti5tiveaPmebaieknFt toermwpaerradtuSreurugnelesCsuortrheenrwt ise specified@. t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
@ t = 1.0s
IFSM
1
A
Power Dissipation RATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MHPFDM150-MH
200
FM160-MH FM180-MH
FM110m0-MWH
FM1150-MH FM1200-MH
UN
TMhaerkrinmgaCloRdeesistance Junction to Ambient Air
12 13 14 RθJA15 16 625 18
10/W 115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Vo
OMpaxeimrautminRgMJSuVnoclttaigoen Temperature
VRMS
14
21
28 TJ 35
42 150 56
70 105
140 Vo
SMtaoxrimagume DteCmBploecrkaintguVreoltage
VDC
20
30
40 TSTG50
60-55-15080
100 150
200 Vo
Maximum Average Forward Rectified Current
IO
1.0
 EPLeEakCFTorRwaIrCd SAuLrgeCCHurrAenRt 8A.3CmTs sEinRgleIShaTlfIsCinSe-w(aTvae mb IF=SM25unless otherwise specified)
 
30
superimposed on rated load (JEDEC method)
Typical ThermaPl Rareasimstaentceer (Note 2)
Typical Junction Capacitance (Note 1)
ORpeervaetinrgseTebmrpeearaktduroewRnanvgoeltage
RSΘyJmA bol
CJ
TVJ(BR) R
Te st conditions
 
-55 to +I1R2=52.5µA
M4I0N
120
  75
M  AX
 
UNIT
-55 to +150 V
Am
 
Am
℃/
P
Storage Temperature Range
  Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
RFatoerdwDaCrdBlovcoklintaggVeoltage
 
NOTES:
@T A=25℃
@T A=125℃
TSTG
- 65 to +175
VR=75V
2.5
IR µA
SYMBOL FM120-MH FM130-MHVFRM=12400V-MH FM150-MH FM160-MH FM180-M0H.0F2M51100-MH FM1150-MH FM1200-MH UN
VF
IRVF
0I.F5=01mA
IF=10mA
IF=50mA
0.70
0.5
10
07.8155
855
1000
0.9
mV
0.92
 
Vo
mA
IF=150mA
1250
1-JMuenascutrieodnatc1aMpHaZciatnadnacpeplied reverse voltage of 4.0 VDC. CT
VR=0, f=1MHz
2 pF
2- Thermal Resistance From Junction to Ambient
 
 
Reveres recovery time
IF=IR=10mA,Irr=0.1×IR,
trr RL=100
4 nS
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.





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