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BAW56DW PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAW56DW
기능 Plastic-Encapsulate Diode
제조업체 WILLAS
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BAW56DW 데이터시트, 핀배열, 회로
WILLAS
SO1.0TA-S3U6R3FAPCElaMsOUtiNcT-SECnHOcTaTpKYsBuAlRaRtIeERDREioCTdIFeIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAW56DWTHRU
FM1200-M+
Pb Free Product
SWITCFHBeIaNtacGhtupDrroIOecesDssEdesign, excellent power dissipation offers
FEATURLbEoewtSteprrroefvileerssuerlfeaackeamgoeucnutrerdenatpapnlidc
thermal resistanc
ation in order to
e.
z Foaptsimt SizewbitocahridnsgpaScpee. ed
z ULoltwrap-oSwmeralollsSs,uhrifgahceeffMicioenucnyt. Package
High current capability, low forward voltage drop.
z FHoigrhGsuerngee rcaalpPabuilriptyo. se Switching Applications
z HGiugahrdCrinognfdour ocvtaernvcoeltage protection.
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PUblt-rFa rheigeh-psapcekedagsweiticshainvga. ilable
Silicon epitaxial planar chip, metal
sil
icon
juncti
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RoHS product for packing code suffix "G"
MHoaliosgteunrefreSeepnrsoidtuivctitfyorLpeavcekiln1g code suffix
"H"
Mechanical data
MAKING: KJC
MaximuEmpoRxyat: iUnLg9s4-@V0TraAt=e2d5flame retardant
Case : Molded plastic, SOD-123H
Terminals
:Plated
termPianraalsm, seotldeerrable
per
,
MIL-STD-750
Peak Repetitive PeMaekthroedve2r0s2e6 voltage
WorkingPPoleaariktyR: eInvdeircsaeteVdobltyacgaethode band
DC BlocMkionugntingVPooltsaigtieon : Any
ForwardWCeoignhttin: AuoppursoxCimurarteendt0.011 gram
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limits
0.031(0.8) Typ.
Unit
VRRM
VRWM
VR
Dimensions in7in5ches and (millimetersV)
IFM 300
mA
Average RectiMfieAdXOIMutUpMut RCuArTreINnGt S AND ELECTRICAL CHARACTERISTIOICS
150
mA
NRoatnin-gRseapte2t5itiveaPmebaiekntFteomrwpearradtuSreuurngleesCs uorthreernwtise specified.@ t = 1.0µs
2
  Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
IFSM
1
A
Power DissipationRATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MHPFDM150-MH
200
FM160-MH FM180-MH
FM1100m-MWH FM1150-MH FM1200-MH
UN
MTahrekirnmg aCloRdeesistance Junction to Ambient Air
12 13 14 RθJA15 16 625 18
10/W 115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Vol
MOapxeimraumtinRgMJSuVnocltatigoen Temperature
VRMS
14
21
28 TJ 35
42 150 56
70 105
140 Vol
MSatoxirmaugmeDteCmBlpoeckriantguVroeltage
VDC
20
30
40 TSTG50
60-55-15080
100 150
200 Vol
Maximum Average Forward Rectified Current
IO
1.0
  EPLeaEkCFoTrwRaIrdCSAurLgeCCuHrrAenRt 8A.3 CmsTsEingRleIShaTlf IsCineS-w(aTveam IbFS=M25unless otherwise specified)
 
30
superimposed on rated load (JEDEC method)
Typical ThermaPl Raersaismtaentceer(Note 2)
Typical Junction Capacitance (Note 1)
OpReeravteinrgsTeebmrpeearaktudroewRannvgeoltage
RSΘyJmA bol
CJ
TVJ(BR) R
Te st conditions
 
IR=-525.t5oµ+A125
M4I0N
120
  75
M  AX
 
UNIT
-55 to +150 V
Am
 
Am
℃/W
PF
Storage Temperature Range
  Reverse voltage leakage current
CHARACTERISTICS
TSTG
- 65 to +175
VR=75V
2.5
IR µA
SYMBOL FM120-MVHRF=M2103V0-MH FM140-MH FM150-MH FM160-MH FM180-M0H.0FM215100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃
RaFteodrwDCarBdlovcokilntgagVoeltage
@T A=125℃
IR VF
 
NOTES:
1- JMueanscutreiodnatc1aMpHaZcaitnadnacpeplied reverse voltage of 4.0 VDC. CT
IF=1mA 0.50
IF=10mA
IF=50mA
IF=150mA
VR=0, f=1MHz
0.70
0.5
10
0.78155
855
1000
1250
2
0.9
mV
0.92
 
Vol
mAm
pF
2- Thermal Resistance From Junction to Ambient
 
 
Reveres recovery time
IF=IR=10mA,Irr=0.1×IR,
trr RL=100
4 nS
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.






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