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부품번호 | R1211NC12E 기능 |
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기능 | Distributed Gate Thyristor | ||
제조업체 | IXYS | ||
로고 | |||
전체 12 페이지수
Distributed gate thyristor type R1211NC12x
Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R1211NC12x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
Data Sheet Type R1211NC12x Issue 3
Page 1 of 12
MAXIMUM
LIMITS
1200
1200
1200
1300
UNITS
V
V
V
V
MAXIMUM
LIMITS
1211
771
424
2497
1927
17.6
19.4
15.48×105
18.82×105
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
August 2012
Distributed gate thyristor type R1211NC12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP ⋅ f and TSINK (max.) = 125 − WAV ⋅ Rth(J −Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
∫i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet Type R1211NC12x Issue 3
Page 4 of 12
August 2012
4페이지 Curves
Figure 1 - On-state characteristics of Limit device
10000
Distributed gate thyristor type R1211NC12x
Figure 2 - Transient thermal impedance
0.1
SSC 0.048K/W
Tj = 125°C
0.01
DSC 0.024K/W
1000
0.001
0.0001
100
0
RR11221111NNSC1102xx-12x
IsIssuseue3 2
0.5 1 1.5 2 2.5 3
Instantaneous on-state voltage - VT (V)
3.5
0.00001
0.0001 0.001
R1R2112N11SN1C0x1-21x2x
IIssssuuee 23
0.01 0.1
Time (s)
1
10 100
Figure 3 - Gate characteristics - Trigger limits
6
R1R21112N11SN10Cx1-212xx
IsIsssuuee23
Tj=25°C
5
4 Max VG dc
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
1
Figure 4 - Gate characteristics - Power curves
16
R1R2112N11SN10Cx1-21x2x
IIssssuuee23
14 Tj=25°C
12
Max VG dc
10
8
6
PG Max 30W dc
4
2 PG 2W dc
Min VG dc
0
0 2 4 6 8 10
Data Sheet Type R1211NC12x Issue 3
Page 7 of 12
August 2012
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부품번호 | 상세설명 및 기능 | 제조사 |
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