Datasheet.kr   

R2619ZC18L 데이터시트 PDF




IXYS에서 제조한 전자 부품 R2619ZC18L은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 R2619ZC18L 자료 제공

부품번호 R2619ZC18L 기능
기능 Distributed Gate Thyristor
제조업체 IXYS
로고 IXYS 로고


R2619ZC18L 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 12 페이지수

미리보기를 사용할 수 없습니다

R2619ZC18L 데이터시트, 핀배열, 회로
Date:- 4 Mar, 2003
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R2619ZC18# to R2619ZC25#
(Old Type Number: R600CH18-21)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1800-2500
1800-2500
1800-2100
1900-2200
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
2619
1792
1037
5227
4395
33.8
37.2
5.71×106
6.92×106
1000
1500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R2619ZC18# to R2619ZC25# Issue 3
Page 1 of 12
March, 2003




R2619ZC18L pdf, 반도체, 판매, 대치품
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R2619ZC18# to R2619ZC25#
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
Data Sheet. Type R2619ZC18# to R2619ZC25# Issue 3
Page 4 of 12
150 µs
Qrr = irr .dt
0
K
Factor
=
t1
t2
March, 2003

4페이지










R2619ZC18L 전자부품, 판매, 대치품
WESTCODE An IXYS Company
Curves
Figure 1 - On-state characteristics of Limit device
10000
R2619ZC18#-25#
Issue 3
Tj = 125°C
Distributed Gate Thyristor Types R2619ZC18# to R2619ZC25#
Figure 2 - Transient thermal impedance
0.1
R2619ZC18#-25#
Issue 3
SSC 0.022K/W
0.01
DSC 0.011K/W
1000
0.001
0.0001
100
0.5
1 1.5 2
Instantaneous on-state voltage - VT (V)
2.5
Figure 3 - Gate characteristics - Trigger limits
9
R2619ZC18#-25#
Issue 3
8 Tj=25°C
7
6
5
IGT, VGT
4
Max VG dc
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Trigger Current - IGT (A)
1
0.00001
0.0001 0.001
0.01 0.1
Time (s)
1
10 100
Figure 4 - Gate characteristics - Power curves
20
R2619ZC18#-25#
Issue 3
18 Tj=25°C
16
Max VG dc
14
12
10
8
PG Max 30W dc
6
PG 5W dc
4
2
Min VG dc
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Data Sheet. Type R2619ZC18# to R2619ZC25# Issue 3
Page 7 of 12
March, 2003

7페이지


구       성 총 12 페이지수
다운로드[ R2619ZC18L.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
R2619ZC18J

Distributed Gate Thyristor

IXYS
IXYS
R2619ZC18K

Distributed Gate Thyristor

IXYS
IXYS

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵