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P0366WC08A 데이터시트 PDF




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기능 Fast Turn-off Thyristor
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P0366WC08A 데이터시트, 핀배열, 회로
Date:- 02 August 2012
Data Sheet Issue:- K1
Fast Turn-off Thyristor
Types P0366WC04# & P0366WC08#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
400-800
400-800
400-800
500-900
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VFGM
IFGM
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power (100µs pulse width)
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=80% VDRM, IFG=1A, tr1µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
366
130
756
590
4700
5170
110×103
134×103
500
1000
12
18
5
1.5
60
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
A
V
W
W
V
°C
°C
Data Sheet. Types P0366WC04#-08# Issue K1
Page 1 of 12
August 2012




P0366WC08A pdf, 반도체, 판매, 대치품
Fast turn-off thyristor types P0366WC04# & P0366WC08#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 100µs integration time.
100 µs
i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) E k + f Rth(J Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types P0366WC04#-08# Issue K1
Page 4 of 12
August 2012

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P0366WC08A 전자부품, 판매, 대치품
Fast turn-off thyristor types P0366WC04# & P0366WC08#
Figure 3 - Gate characteristics at 25°C junction temperature
Figure 4 - Gate trigger characteristic
Trigger point of all thyristors lie within the areas shown.
Gate drive load line must lie outside appropriate IG/VG rectangle
Data Sheet. Types P0366WC04#-08# Issue K1
Page 7 of 12
August 2012

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