Datasheet.kr   

P0848YS05D 데이터시트 PDF




IXYS에서 제조한 전자 부품 P0848YS05D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 P0848YS05D 자료 제공

부품번호 P0848YS05D 기능
기능 Fast Turn-off Thyristor
제조업체 IXYS
로고 IXYS 로고


P0848YS05D 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 12 페이지수

미리보기를 사용할 수 없습니다

P0848YS05D 데이터시트, 핀배열, 회로
WESTCODE
Date:- 27 Apr, 2001
Data Sheet Issue:- 1
Fast Turn-off Thyristor
Types P0848YS04x to P0848YS05x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
400-500
400-500
400-500
500-600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
848
558
319
1713
1394
8750
9625
383×103
463×103
500
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1
Page 1 of 12
April, 2001




P0848YS05D pdf, 반도체, 판매, 대치품
WESTCODE Positive development in power electronics
P0848YS04x to P0848YS05x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) E k + f Rth(J Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1
Page 4 of 12
April, 2001

4페이지










P0848YS05D 전자부품, 판매, 대치품
WESTCODE Positive development in power electronics
Curves
Figure 1 - On-state characteristics of Limit device
10000
P0848YS04x to P0848YS05x
Figure 2 - Transient thermal impedance
0.1
SSC 0.064K/W
Tj = 125°C
Tj = 25°C
0.01
DSC 0.032K/W
1000
0.001
0.0001
100
0
P0848YS04x - 05x
Issue 1
0.5 1 1.5 2 2.5 3
Instantaneous on-state voltage - VT (V)
3.5
Figure 3 - Gate characteristics - Trigger limits
8
P0848YS04x - 05x
Issue 1
Tj=25°C
0.00001
0.0001 0.001
0.01 0.1
Time (s)
P0848YS04x - 05x
Issue 1
1 10 100
Figure 4 - Gate characteristics - Power curves
20
P0848YS04x - 05x
Issue 1
18 Tj=25°C
6
Max VG dc
16
14
Max VG dc
12
4
IGT, VGT
2
IGD, VGD
0
0
0.25 0.5
Gate Trigger Current - IGT (A)
Min VG dc
0.75
10
8
6
4
2
0
0
PG Max 30W dc
PG 2W dc
Min VG dc
2468
Gate Trigger Current - IGT (A)
10
Data Sheet. Types P0848YS04x to P0848YS05 Issue 1
Page 7 of 12
April, 2001

7페이지


구       성 총 12 페이지수
다운로드[ P0848YS05D.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
P0848YS05B

Fast Turn-off Thyristor

IXYS
IXYS
P0848YS05C

Fast Turn-off Thyristor

IXYS
IXYS

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵