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Datasheet K1947ZC400-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K19 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K1904 | N-Channel MOSFET, 2SK1904 Ordering number:EN4211
N-Channel Silicon MOSFET
2SK1904
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK1904]
10.0 3.2
3.5  Sanyo Semiconductor Corporation data | | |
| 2 | K1908 | N-Channel MOSFET, 2SK1908 Sanyo Semicon Device data | | |
| 3 | K1917 | N-Channel MOSFET, 2SK1917 Fuji Electric data | | |
| 4 | K1918 | Silicon N-Channel MOS FET 2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings  Hitachi mosfet | | |
| 5 | K192A | N-Channel MOSFET, 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications VHF Band Amplifier Applications
2SK192A
Unit: mm
· High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS  Toshiba Semiconductor data | | |
| 6 | K193 | N-Channel FET (2SK193) NEC mosfet | | |
| 7 | K1930 | N-Channel MOSFET, 2SK1930 2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.) l Low leak Toshiba Semiconductor data | |
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