Datasheet.kr   

G1000LM250 데이터시트 PDF




IXYS에서 제조한 전자 부품 G1000LM250은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 G1000LM250 자료 제공

부품번호 G1000LM250 기능
기능 Anode-Shorted Gate Turn-Off Thyristor
제조업체 IXYS
로고 IXYS 로고


G1000LM250 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 13 페이지수

미리보기를 사용할 수 없습니다

G1000LM250 데이터시트, 핀배열, 회로
Date:- 18 Feb, 2004
Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor
Type G1000L#250
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VDC-link
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Maximum continuous DC-link voltage.
MAXIMUM
LIMITS
2500
2500
18
1400
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Maximum turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
500
970
7.5
8.9
125x103
1000
160
8
100
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type G1000L#250 Issue 1
Page 1 of 13
February, 2004




G1000LM250 pdf, 반도체, 판매, 대치품
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-
off (see diagram 10) to exceed VRGM which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon
the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Data Sheet. Type G1000L#250 Issue 1
Page 4 of 13
February, 2004

4페이지










G1000LM250 전자부품, 판매, 대치품
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2.7 Turn-off characteristics
The basic circuit used for the turn-off test is given in diagram 9. Prior to the negative gate pulse being
applied constant current, equivalent to ITGQM, is established in the DUT. The switch Sx is opened just
before DUT is gated off with a reverse gate pulse as specified in the characteristic/data curves. After the
period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to
rise across DUT until Dc turns-on at a voltage set by the active clamp Cc, the voltage will be held at this
value until energy stored in Lx is depleted, after which it will fall to VDC .The value of Lx is selected to give
required VD Over the full tail time period. The overshoot voltage VDM is derived from Lc and forward voltage
characteristic of DC, typically VDM=1.2VD to 1.5VD depending on test settings. The gate is held reverse
biased through a low impedance circuit until the tail current is fully extinguished.
Lc
Dc
Sx RL
Lx Rs
CT Ds
Vd
i DX
Cs Cd
Gate- DUT
drive
Cc
Vc
RCD snubber
Diagram 9, Turn-off test circuit.
The definitions of turn-off parameters used in the characteristic data are given in diagram 10 on page 8.
Data Sheet. Type G1000L#250 Issue 1
Page 7 of 13
February, 2004

7페이지


구       성 총 13 페이지수
다운로드[ G1000LM250.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
G1000LM250

Anode-Shorted Gate Turn-Off Thyristor

IXYS
IXYS

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵