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부품번호 | R0577YS10D 기능 |
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기능 | Distributed Gate Thyristor | ||
제조업체 | Westcode Semiconductors | ||
로고 | |||
WESTCODE
Date:- 21 Jun, 2001
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R0577YS10x to R0577YS12x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
577
379
216
1169
712
6.0
6.6
180
218
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
kA2s
kA2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 1 of 12
June, 2001
WESTCODE Positive development in power electronics
R0577YS10x to R0577YS12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP ⋅ f and TSINK (max.) = 125 − WAV ⋅ Rth(J −Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
∫i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 4 of 12
June, 2001
4페이지 WESTCODE Positive development in power electronics
Curves
Figure 1 - On-state characteristics of Limit device
10000
R0577YS10x to R0577YS12x
Figure 2 - Transient thermal impedance
1
1000
Tj = 125°C
Tj = 25°C
0.1
0.01
SSC 0.1K/W
DSC 0.05K/W
0.001
100
0
R0577YS10x-12x
Issue 1
1234
Instantaneous on-state voltage - VT (V)
5
Figure 3 - Gate characteristics - Trigger limits
8
R0577YS10x-12x
Issue 1
Tj=25°C
7
6
Max VG dc
5
0.0001
0.0001 0.001
0.01 0.1
Time (s)
R0577YS10x-12x
Issue 1
1 10 100
Figure 4 - Gate characteristics - Power curves
20
R0577YS10x-12x
Issue 1
18 Tj=25°C
Max VG dc
16
14
12
4 IGT, VGT
3
2
1
Min VG dc
IGD, VGD
0
0 0.1 0.2 0.3 0.4 0.5
Gate Trigger Current - IGT (A)
0.6
10
8
6
4
2
0
0
PG Max 30W dc
PG 2W dc
Min VG dc
2468
Gate Trigger Current - IGT (A)
10
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 7 of 12
June, 2001
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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R0577YS10D | Distributed Gate Thyristor | Westcode Semiconductors |
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