STU6N65K3 Datasheet PDF - STMicroelectronics
| Part Number | STU6N65K3 | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET
in TO-220FP, I²PAKFP, IPAK
Datasheet — production data
Features
Order codes VDSS RDS(on) max.
STF6N65K3
STFI6N65K3 650 V < 1.3 Ω
STU6N65K3
ID
5.4 A
Ptot
30 W
110 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
TAB
3
2
1
TO-220FP
1
2
3
I²PAKFP
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STF6N65K3
STFI6N65K3
STU6N65K3
Marking
6N65K3
Package
TO-220FP
I²PAKFP
IPAK
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 18424 Rev 2
1/16
www.st.com
16
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STF6N65K3, STFI6N65K3, STU6N65K3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 325 V, ID = 2.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
14
10
-
44
24
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
5.4 A
-
21.6 A
VSD (2) Forward on voltage
ISD = 5.4 A, VGS = 0
-
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
285
ISD = 5.4 A, di/dt = 100 A/µs - 5100
VDD = 60 V (see Figure 22)
14
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
330
VDD = 60 V, Tj = 150 °C
- 2500
(see Figure 22)
15.5
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage
Igs=± 1 mA, ID=0
(open drain)
Min. Typ. Max. Unit
30 - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components
Doc ID 18424 Rev 2
5/16
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| Information | Total 16 Pages | |
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