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R3636EC18M 데이터시트 PDF




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기능 Distributed Gate Thyristor
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R3636EC18M 데이터시트, 핀배열, 회로
WESTCODE
An IXYS Company
Date:- 30 Mar, 2007
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R3636EC16# to R3636EC20#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
1600-2000
1600-2000
1600-2000
1700-2100
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C (note 2)
Maximum average on-state current. Tsink=85°C (note 2)
Maximum average on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
3636
2501
1518
7168
6233
38.9
42.7
7.57×106
9.12×106
500
1000
5
4
50
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 1 of 12
March, 2007




R3636EC18M pdf, 반도체, 판매, 대치품
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TK (max.) = 125 WAV RthJK
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
i.e. Qrr = irr .dt
0
(iii)
K
Factor
=
t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TK (new) = TK (original ) E k + f RthJK
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
RthJK = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E f
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 4 of 12
March, 2007

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R3636EC18M 전자부품, 판매, 대치품
WESTCODE An IXYS Company
Curves
Figure 1 – On-state characteristics of Limit device
10000
R3636EC16#-20#
Issue 1
1000
Tj = 125°C
Tj = 25°C
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Figure 2 – Transient thermal impedance
0.1
R3636EC16#-20#
Issue 1
0.01
SSC
0.015K/W
DSC
0.0075K/W
0.001
0.0001
100
0
0.5 1 1.5 2
Instantaneous on-state voltage - VT (V)
2.5
Figure 3 – Gate characteristics – Trigger limits
8 R3636EC16#-20#
Issue 1
Tj=25°C
7
6
Max VG dc
5
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.5 1
Gate Trigger Current - IGT (A)
1.5
0.00001
0.0001 0.001
0.01
0.1
Time (s)
1
10 100
Figure 4 – Gate characteristics – Power curves
20 R3636EC16#-20#
Issue 1
18 Tj=25°C
16
Max VG dc
14
12
10 PG Max 50W dc
8
6
4
PG 4W dc
Min VG dc
2
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 7 of 12
March, 2007

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