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부품번호 | NXP3875G 기능 |
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기능 | 150mA NPN general-purpose transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
NXP3875Y; NXP3875G
50 V, 150 mA NPN general-purpose transistors
Rev. 1 — 12 December 2012
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
General-purpose transistors
Small SMD plastic packages
Two different current gain selections
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
NXP3875Y
NXP3875G
Conditions
open base
VCE = 6 V; IC = 2 mA
Min Typ Max Unit
- - 50 V
- - 150 mA
120 -
200 -
240
400
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
33
12
1
2
sym021
NXP Semiconductors
NXP3875Y; NXP3875G
50 V, 150 mA NPN general-purpose transistors
7. Characteristics
Table 7. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base
cut-off current
IEBO emitter-base
cut-off current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 C
VEB = 5 V; IC = 0 A
hFE DC current gain VCE = 6 V; IC = 2 mA
NXP3875Y
NXP3875G
VCEsat collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
VBEsat base-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
fT transition frequency VCE = 10 V; IC = 1 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
NF noise figure
IC = 0.1 mA; VCE = 6 V;
RS = 10 k; f = 1 kHz;
Min Typ Max Unit
- - 100 nA
- - 5 A
- - 100 nA
120 -
200 -
--
--
80 -
--
--
240
400
250 mV
1V
- MHz
3.5 pF
10 dB
NXP3875Y_NXP3875G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 December 2012
© NXP B.V. 2012. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
NXP3875Y; NXP3875G
50 V, 150 mA NPN general-purpose transistors
103
hFE
102
(1)
(2)
(3)
006aad245
200
IC
(mA)
150
IB = 7 mA 6.3 5.6 4.9
100
50
006aad246
4.2
3.5
2.8
2.1
1.4
0.7
10
10-1
1
10 102 103
IC (mA)
VCE = 6 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 11. NXP3875G: DC current gain as a function of
collector current; typical values
1.2
VBE
(V)
0.8
006aad247
(1)
(2)
(3)
0.4
0
02
Tamb = 25 C
46
VCE (V)
Fig 12. NXP3875G: Collector current as a function of
collector-emmiter voltage; typical values
1.2
VBEsat
(V)
0.8
006aad248
(1)
(2)
(3)
0.4
0
10-1
1
10 102 103
IC (mA)
VCE = 6 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 13. NXP3875G: Base-emmiter voltage as a
function of collector current; typical values
0
10-1
1
10 102 103
IC (mA)
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 14. NXP3875G: Base-emitter saturation voltage as
a function of collector currant; typical values
NXP3875Y_NXP3875G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 December 2012
© NXP B.V. 2012. All rights reserved.
7 of 14
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부품번호 | 상세설명 및 기능 | 제조사 |
NXP3875G | 150mA NPN general-purpose transistors | NXP Semiconductors |
NXP3875Y | 150mA NPN general-purpose transistors | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |