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부품번호 | R2620ZC23L 기능 |
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기능 | Distributed Gate Thyristor | ||
제조업체 | IXYS | ||
로고 | |||
Date:- 24 Feb, 2003
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R2620ZC22# to R2620ZC25#
(Old Type Number: R610CH18-25)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2200-2500
2200-2500
2200-2500
2300-2600
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
2620
1722
983
5300
4299
33800
37200
5.71×106
6.92×106
1000
1500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 1 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R2620ZC22# to R2620ZC25#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP ⋅ f and TSINK (max.) = 125 − WAV ⋅ Rth(J −Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
∫i.e. Qrr = irr .dt
0
(iii)
K
Factor
=
t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 4 of 12
February, 2003
4페이지 WESTCODE An IXYS Company
Curves
Figure 1 - On-state characteristics of Limit device
10000
R2620ZC22#-25#
Issue 2
Tj = 125°C
Distributed Gate Thyristor Types R2620ZC22# to R2620ZC25#
Figure 2 - Transient thermal impedance
0.1
R2620ZC22#-25#
Issue 2
SSC 0.022K/W
0.01
DSC 0.011K/W
1000
0.001
0.0001
100
1.4
1.6 1.8
2
Instantaneous on-state voltage - VT (V)
2.2
Figure 3 - Gate characteristics - Trigger limits
8
R2620ZC22#-25#
Issue 2
Tj=25°C
7
6
5
4
IGT, VGT
Max VG dc
3
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Trigger Current - IGT (A)
1
0.00001
0.0001 0.001
0.01 0.1
Time (s)
1
10 100
`
Figure 4 - Gate characteristics - Power curves
20
R2620ZC22#-25#
Issue 2
18 Tj=25°C
16
Max VG dc
14
12
10
8
PG Max 30W dc
6
PG 5W dc
4
Min VG dc
2
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 7 of 12
February, 2003
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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R2620ZC23J | Distributed Gate Thyristor | IXYS |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |