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부품번호 | R3047TC24M 기능 |
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기능 | Distributed Gate Thyristor | ||
제조업체 | Westcode Semiconductors | ||
로고 | |||
WESTCODE
Date:- 25 May, 2001
Data Sheet Issue:- 2
Provisional Data
Distributed Gate Thyristor
Types R3047TC24x to R3047TC28x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2400-2800
2400-2800
2400-2800
2500-2900
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C (note 2)
Mean on-state current. Tsink=85°C (note 2)
Mean on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 1 of 12
MAXIMUM
LIMITS
3047
2043
1196
6094
5097
50
55
12.5×106
15.1×106
500
1000
5
4
50
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP ⋅ f and TSINK (max.) = 125 − WAV ⋅ Rth(J −Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
∫i.e. Qrr = irr .dt
0
(iii)
K
Factor
=
t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 4 of 12
May, 2001
4페이지 WESTCODE Positive development in power electronics
Curves
Figure 1 - On-state characteristics of Limit device
10000
R3047TC24x-28x
Figure 2 - Transient thermal impedance
0.1
Tj = 125°C
Tj = 25°C
0.01
SSC 0.016K/W
DSC 0.008K/W
1000
0.001
0.0001
100
1
R3047TC24x-28x
AD Issue 2
1.5 2 2.5 3
Instantaneous on-state voltage - VT (V)
3.5
Figure 3 - Gate characteristics - Trigger limits
8
R3047TC24x-28x
AD Issue 2
Tj=25°C
7
6
Max VG dc
5
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.25 0.5 0.75 1 1.25
Gate Trigger Current - IGT (A)
1.5
0.00001
0.0001 0.001
0.01
0.1
Time (s)
R3047TC24x-28x
AD Issue 2
1 10 100
Figure 4 - Gate characteristics - Power curves
20
R3047TC24x-28x
AD Issue 2
18 Tj=25°C
16
Max VG dc
14
12
10
8
PG Max 30W dc
6
4
PG 4W dc
Min VG dc
2
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 7 of 12
May, 2001
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
R3047TC24K | Distributed Gate Thyristor | Westcode Semiconductors |
R3047TC24L | Distributed Gate Thyristor | Westcode Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |