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Datasheet BZX55C2V4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX55C2V4 | Silicon Zener Diode, Rectifier BZX55C
SILICON PLANAR ZENER DIODES
The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. |  SEMTECH | diode |
| 2 | BZX55C2V4 | Small Signal Zener Diodes www.vishay.com
BZX55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
2.5; 5
VZ specification
Pulse current
Int. construction
Single
UNIT V mA
FEATURES • Very sharp reverse characteristic • Low |  Vishay | diode |
| 3 | BZX55C2V4 | 500mW ZENER DIODES ZENER DIODES
SENSITRON SEMICONDUCTOR
OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C
500mW ZENER DIODES / DO-35/DL-35 (MINI MELF)
TYPE
Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV |  SENSITRON | diode |
| 4 | BZX55C2V4 | 500mW ZENER DIODE MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
500 mW DO-35 Glass Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP
GENERAL DATA
500 mW DO-35 GLASS
GLASS ZENER DIODES 500 MILLIWATTS 1.8–200 VOLTS
500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes
Specification |  Diodes Incorporated | diode |
| 5 | BZX55C2V4 | SILICON ZENER DIODES CE
CHENYI ELECTRONICS FEATURES
. The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request.
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
MECHANICAL DATA
. Case: DO-35 glass case . Polarity: Color band denote |  EIC discrete Semiconductors | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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