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PDF MCMA50PD1200TB Data sheet ( Hoja de datos )

Número de pieza MCMA50PD1200TB
Descripción Thyristor / Diode Module
Fabricantes IXYS 
Logotipo IXYS Logotipo



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Thyristor \ Diode Module
Phase leg
Part number
MCMA50PD1200TB
3 1 5 42
MCMA50PD1200TB
VRRM
I TAV
VT
= 2x 1200 V
= 50 A
= 1.17 V
Backside: isolated
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-240AA
Isolation Voltage: 4800 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c

1 page




MCMA50PD1200TB pdf
MCMA50PD1200TB
Thyristor
160
800 104
50 Hz, 80% VRRM
VR = 0 V
120
IT
80
[A] TVJ = 125°C
140°C
40
TVJ = 25°C
0
0.5 1.0 1.5 2.0
VT [V]
Fig. 1 Forward characteristics
ITSM
[A]
400
TVJ = 140°C
TVJ = 45°C
I2t
103
[A2s]
TVJ = 45°C
TVJ = 140°C
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
102
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 s)
10
1: IGD, TVJ = 140°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
1
34
2
56
100.0
10.0
tgd
[μs]
1.0
TVJ = 25°C
lim.
typ.
120
80
ITAVM
[A]
40
dc =
1
0.5
0.4
0.33
0.17
0.08
0.1
1
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
10 100 1000 10000
IG [mA]
Fig. 4 Gate voltage & gate current
0.1
0.01
0.10
1.00
IG [A]
10.00
Fig. 5 Gate controlled delay time tgd
0
0 40 80 120 160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
80 0.80
Ptot 60
[W]
40
dc =
1
0.5
0.4
0.33
0.17
0.08
20
RthHA
0.2
0.4
0.6
0.8
1.0
2.0
0
0 20 40 60 0 40 80 120 160
IT(AV) [A]
Tamb [°C]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0.70
0.60
ZthJC0.50
0.40
[K/W]
0.30
0.20
0.10
0.00
1
i Rthi (K/W)
1 0.0100
2 0.0500
3 0.1500
4 0.3200
5 0.1700
ti (s)
0.0004
0.0090
0.0140
0.0500
0.3600
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c

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