|
|
PDF MMBT3906G Data sheet ( Hoja de datos )
| Número de pieza | MMBT3906G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Zowie Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBT3906G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
Lead free product
3
MMBT3906G
1
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
DEVICE MARKING
MMBT3906=2A
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
V(BR)CEO
Collector-Base Breakdowe Voltage
( IC= -10 uAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
Base Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
Collector Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
V(BR)CBO
V(BR)EBO
IBL
ICEX
COLLECTOR
3
BASE
1
2
EMITTER
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / oC
oC / W
mW
mW / oC
oC / W
oC
Min. Max. Unit
-40 - Vdc
-40 - Vdc
-5.0 - Vdc
- -50 nAdc
- -50 nAdc
REV. 0
Zowie Technology Corporation
1 page  
Zowie Technology Corporation
MMBT3906G
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
TYPICAL STATIC CHARACTERISTICS
TJ = +125oC
TJ = +25oC
TJ = -55oC
VCE=1.0V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT ( mA )
Figure 13. DC Current Gain
20 30
50 70 100
200
1.0
0.8
0.6
0.4
0.2
0
0.01
IC = 1.0 mA
10 mA
30 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT ( mA )
Figure 14. Collector Saturation Region
TJ = 25oC
100 mA
2.0 3.0
5.0 7.0 10
1.0
VBE(sat) @ IC/IB=10
0.8
VBE @ ICE=1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB=10
0
1.0
2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
1.0
0.5
VC FOR VCE(sat)
0
-0.5
-1.0
-1.5
VB FOR VBE(sat)
+25oC to +125oC
-55oC to +25oC
-55oC to +25oC
+25oC to +125oC
-2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT ( mA )
Figure 16. Temperature Coefficients
REV. 0
Zowie Technology Corporation
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT3906G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBT3906 | Silicon PNP transistor |  BLUE ROCKET ELECTRONICS |
| MMBT3906 | PNP switching transistor |  Philipss |
| MMBT3906 | SMALL SIGNAL PNP TRANSISTOR |  STMicroelectronics |
| MMBT3906 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |  TRSYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |