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E1200NC25C 데이터시트 PDF




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E1200NC25C 데이터시트, 핀배열, 회로
Date:- 8 March, 2013
Data Sheet Issue: A1
Advance Data
High Power Sonic FRD
Type E1200NC25C
Absolute Maximum Ratings
VOLTAGE RATINGS
VRRM
VRSM
VR(d.c.)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Maximum reverse d.c. voltage (note 1)
MAXIMUM
LIMITS
2500
2600
1250
UNITS
V
V
V
OTHER RATINGS (note 6)
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
I2t
Prr
Tj op
Tstg
Mean forward current, Tsink=55°C, (note 2)
Mean forward current. Tsink=100°C, (note 2)
Mean forward current. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum non-repetitive peak reverse recovery power, (note 7)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1338
892
558
2483
2223
13.3
14.8
884×103
1.1×106
3.5
-40 to +150
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
MW
°C
°C
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C Tj initial.
6) Current (IF) ratings have been calculated using VT0 and rT (see page 2)
7) Tj=Tjop, IF=1200A, di/dt=1500A/µs Vr=1250V and Ls=200nH. Test circuit and sample waveform are shown in
diagram 1. IGBT type T1500TB25E used as switch.
Provisional Data Sheet. Type E1200NC25C Issue A1
Page 1 of 11
March, 2013




E1200NC25C pdf, 반도체, 판매, 대치품
High Power Sonic FRD Type E1200NC25C
4.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
[ ]TSINK = TJ (MAX ) E k + f Rth(J Hs)
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot ) = W(original ) + E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R2
=
4
Cs
Vr
di dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I AV = − VT 0 +
VT 02 + 4 ff 2 rT WAV
2 ff 2 rT
Where VT0 =1.305V, rT =0.678m
Provisional Data Sheet. Type E1200NC25C Issue A1
Page 4 of 11
March, 2013

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E1200NC25C 전자부품, 판매, 대치품
Figure 5 - Maximum reverse current, Irm
1000
E1200NC25C
issue A1
Tj=150°C
1200A
800A
500A
High Power Sonic FRD Type E1200NC25C
Figure 6 – Maximum recovery time, trr (50% chord)
100
E1200NC25C
issue A1
Tj = 150°C
10
1200A
800A
400A
100
100
1000
Commutation rate - di/dt (A/µs)
10000
1
100
1000
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulse
10000
E1200NC25C
issue A1
TMj e=a1s5u0re°dC
Vrw=ith1o2u5t0V
Msenausbubreerd
without
snubber
Figure 8 – Sine wave energy per pulse
1.00E+02
E1200NC25C
issue A1
Tj = 150°C
10000
1000
1200A
800A
400A
1.00E+01
2000A
1.00E+00
1500A
1000A
800A
100
100
1000
Commutation rate - di/dt (A/µs)
10000
500A
1.00E-01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Provisional Data Sheet. Type E1200NC25C Issue A1
Page 7 of 11
March, 2013

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