|
|
|
부품번호 | M0433WC160 기능 |
|
|
기능 | Soft Recovery Diode | ||
제조업체 | IXYS | ||
로고 | |||
전체 11 페이지수
Date:- 6 Nov, 2014
Data Sheet Issue:- 2
Soft Recovery Diode
Type M0433WC120 to M0433WC200
Absolute Maximum Ratings
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
IFSM2
I2t
I2t
Tj op
Tstg
OTHER RATINGS
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Maximum average forward. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
1200 - 2000
1300 - 2100
UNITS
V
V
MAXIMUM
LIMITS
433
202
115
868
724
4500
4950
101×103
123×103
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
°C
°C
Data Sheet. Types M0433WC120 to M0433WC200 Issue 2
Page 1 of 11
October 2014
Soft Recovery Diode Types M0433WC120 to M0433WC200
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
TSINK TJ (MAX ) E k f RthJK
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
RthJK = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W(tot) W(original) E f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R2 4 Vr
CS didt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M0433WC120 to M0433WC200 Issue 2
Page 4 of 11
October 2014
4페이지 Figure 5 - Maximum reverse current, Irm
1000
M0433WC120-200
Issue 2
Tj = 125°C
1500A
1000A
550A
250A
Soft Recovery Diode Types M0433WC120 to M0433WC200
Figure 6 - Maximum recovery time, trr (50% chord)
10
M0433WC120-200
Issue 2
Tj = 125°C
100 1500A
1000A
550A
250A
10
1
10 100
Commutation rate - di/dt (A/µs)
1000
Figure 7 – Reverse recovery energy per pulse
1000
M0433WC120-200
Issue 2
Tj = 125°C
Vr=67% VRRM
0.1µF, 5
Snubber
1000A
400A
200A
100A
1
1 10 100
Commutation rate - di/dt (A/µs)
Figure 8 - Sine wave energy per pulse
1.00E+02
M0433WC120-200
Issue 2
Tj = 125°C
1.00E+01
3000A
2000A
1000A
500A
250A
1000
100 1.00E+00
1.00E-01
10
1
10 100
Commmutation rate - di/dt (A/µs)
500A
1000
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Data Sheet. Types M0433WC120 to M0433WC200 Issue 2
Page 7 of 11
October 2014
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ M0433WC160.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
M0433WC160 | Soft Recovery Diode | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |