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N0416SC040 데이터시트 PDF




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기능 Phase Control Thyristor
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N0416SC040 데이터시트, 핀배열, 회로
Date:- 23rd Sept 2014
Data Sheet Issue:- 3
Phase Control Thyristor
Types N0416SC040 to N0416SC080
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
400-800
400-800
400-800
500-900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VFGM
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
416
274
840
685
6000
6600
180×103
218×103
500
1000
18
5
2
100
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
V
W
W
V
°C
°C
Data Sheet. Types N0416SC040-080 Issue 2
Page 1 of 10
September 2014




N0416SC040 pdf, 반도체, 판매, 대치품
Fast Turn-Off Thyristor N0416SC040-N0416SC080
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
 WAV EP f and TSINK(max .) 125 WAV RthJ Hs
11.0 Reverse Recovery Loss
11.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
 TSINK(new) TSINK(original) E k f RthJ Hs
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types N0416SC040-080 Issue 2
Page 4 of 10
September 2014

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N0416SC040 전자부품, 판매, 대치품
Fast Turn-Off Thyristor N0416SC040-N0416SC080
Figure 4 Power dissipation and case temperature Vs. current Square wave
Data Sheet. Types N0416SC040-080 Issue 2
Page 7 of 10
N0416SC040-080
Issue 2
September 2014

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