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PDF IXFT30N60Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT30N60Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Preliminary Data Sheet
IXFH 30N60Q
IXFT 30N60Q
VDSS
ID25
RDS(on)
= 600 V
= 30 A
= 0.23 Ω
trr ≤ 250 ns
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
30 A
120 A
30 A
45 mJ
1.5 J
10 V/ns
500
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
TVeGSmp=e0raVtu, rIeD
= 250µA
Coefficient
VDS = VGS, ID = 4 mA
Temperature Coefficient
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
600
0.095
2.5
- 0.24
V
%/K
4.5 V
%/K
±200 nA
25 µA
1 mA
0.23 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Low gate charge
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99059(06/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT30N60Q.PDF ] | |
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