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부품번호 | N0795YN160 기능 |
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기능 | Phase Control Thyristor | ||
제조업체 | IXYS | ||
로고 | |||
Date:- 6th December, 2012
Data Sheet Issue:- A1
Phase Control Thyristor
Types N0795YN100 to N0795YN180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
(continuous, 50Hz)
Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s)
(non-repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Anode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 1 of 12
MAXIMUM
LIMITS
1000-1800
1100-1900
1000-1800
1100-1900
MAXIMUM
LIMITS
795
540
300
1580
1340
9450
10500
444×103
551×103
250
500
1000
5
3
30
-60 to +125
-60 to +125
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
December, 2012
Phase Control Thyristor Types N0795YN100 to N0795YN180
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV = −VT 0 +
VT
2
0
+
4⋅
ff
2
⋅ rT
⋅WAV
2 ⋅ ff 2 ⋅ rT
and:
Where VT0=0.95V, rT=0.45mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
WAV
=
∆T
Rth
∆T = Tj max − TK
Supplementary Thermal Impedance
Conduction Angle
30° 60° 90° 120°
Square wave Double Side Cooled
0.0721 0.0590 0.0529 0.0494
Square wave Anode Side Cooled
0.1192 0.1058 0.1000 0.0968
Sine wave Double Side Cooled
0.0550 0.0455 0.0429 0.0414
Sine wave Anode Side Cooled
0.1007 0.0922 0.0901 0.0890
180°
0.0455
0.0932
0.0400
0.0880
270°
0.0423
0.0901
d.c.
0.0400
0.0880
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln(IT ) + C ⋅ IT + D ⋅ IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A 1.002653
B 0.04167941
C 2.853771×10-4
D -1.458858×10-3
125°C Coefficients
A 0.7805236
B 0.02060617
C 4.092687×10-4
D 2.110089×10-3
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 4 of 12
December, 2012
4페이지 Curves
Figure 1 – On-state characteristics of Limit device
10000
N0795YN100-180
Issue A1
Phase Control Thyristor Types N0795YN100 to N0795YN180
Figure 2 – Transient thermal impedance junction to
case
0.1
N0795YN100-180
Issue A1
ASC
KSC
DSC
1000
0.01
100
Tj = 125°C
Tj = 25°C
0.001
10
0
0.5 1 1.5 2
Instantaneous On-state voltage - VTM (V)
2.5
Figure 3 – Gate Characteristics – Trigger limits
8
N0795YN100-180
Issue A1
Tj=25°C
7
6
Max VG dc
5
4
3
IGT, VGT
2
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Trigger Current - IGT (A)
1
0.0001
0.0001
0.001
0.01
0.1
Time (s)
1
10 100
Figure 4 – Gate Characteristics – Power Curves
15
N0795YN100-180
Issue A1
Tj=25°C
Max VG dc
10
5
PG(AV) 4W dc
PGM Max 30W dc
Min VG dc
0
0 2 4 6 8 10 12
Gate Trigger Current - IGT (A)
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 7 of 12
December, 2012
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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