Datasheet.kr   

N1588NC200 데이터시트 PDF




IXYS에서 제조한 전자 부품 N1588NC200은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 N1588NC200 자료 제공

부품번호 N1588NC200 기능
기능 Phase Control Thyristor
제조업체 IXYS
로고 IXYS 로고


N1588NC200 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 11 페이지수

미리보기를 사용할 수 없습니다

N1588NC200 데이터시트, 핀배열, 회로
Date:- 02 August 2012
Data Sheet Issue:- 2
Phase Control Thyristor
Types N1588NC200 to N1588NC260
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2000-2600
2000-2600
2000-2600
2100-2700
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=3000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1588
1087
656
3138
2710
22.5
24.75
2.53×106
3.06×106
150
300
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1588NC200 to N1588NC260 Issue 2.
Page 1 of 11
August 2012




N1588NC200 pdf, 반도체, 판매, 대치품
N1588NC200 to N1588NC260
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV = − VT 0 +
VT 02 + 4 ff 2 rT WAV
2 ff 2 rT
and:
WAV
=
T
Rth
T = T j max THs
Where VT0=0.951V, rT=0.268mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Supplementary Thermal Impedance
30°
0.0312
0.0543
0.0256
0.0509
60°
0.0285
0.0513
0.0246
0.0482
90°
0.0267
0.0496
0.0239
0.0471
120°
0.0255
0.0484
0.0233
0.0463
180°
0.0240
0.0469
0.022
0.044
270°
0.0228
0.0455
d.c.
0.0220
0.0440
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT ) + C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
125°C Coefficients
A 0.9991763 A
B -0.04173358 B
C 8.96106×10-5 C
D 0.01326142 D
0.3604009
0.079552
2.23×10-4
1.92×10-3
Data Sheet. Types N1588NC200 to N1588NC260 Issue 2.
Page 4 of 11
August 2012

4페이지










N1588NC200 전자부품, 판매, 대치품
Figure 5 – Recovered Charge, Qrr
100000
N1N518588N8CN2S0200-02-62060
IssIusseu2e 1
N1588NC200 to N1588NC260
Figure 6 – Recovered charge, Qra (50% chord)
10000
NN1518588N8NCS2020-02-62060
IssIsuseue2 1
10000
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
1
10 100
di/dt (A/µs)
1000
1000
1
10 100
di/dt (A/µs)
1000
Figure 7 – Reverse recovery current, Irm
1000
NN11558888NNSC220000--226600
IIssssuuee 21
2000A
1500A
1000A
500A
Figure 8 – Reverse recovery time, trr
100
N1N518588N8CN2S0200-02-62060
IssIsuseu2e 1
2000A
1500A
100 10 1000A
500A
10 1
1 10 100 1000
1 10 100 1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types N1588NC200 to N1588NC260 Issue 2.
Page 7 of 11
August 2012

7페이지


구       성 총 11 페이지수
다운로드[ N1588NC200.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
N1588NC200

Phase Control Thyristor

IXYS
IXYS

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵