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N3175HE180 데이터시트, 핀배열, 회로
Date:- 4th December, 2014
Data Sheet Issue:- A2
Phase Control Thyristor
Types N3175HE160 and N3175HE180
Development Type No.: NX449HE160 and NX449HE180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1600-1800
1600-1800
1600-1800
1700-1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Maximum average on-state current. Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)
Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
Data Sheet. Types N3175HE160 to N3175HE180 Issue A2.
Page 1 of 11
MAXIMUM
LIMITS
3175
2150
1160
6310
5370
45.5
50.0
1.04 x 107
1.25 x 107
75
150
300
5
5
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
V
°C
°C
December, 2014




N3175HE180 pdf, 반도체, 판매, 대치품
Phase Control Thyristor Types N3175HE1600 and N3175HE1800
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV = −VT 0 +
VT 02 + 4 ff 2 rT WAV
2 ff 2 rT
and:
Where VT0=0.90V, rT=0.11mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max TK
Supplementary Thermal Impedance
Conduction Angle
30° 60° 90° 120°
Square wave Double Side Cooled 0.0150 0.0145 0.0141 0.0138
Square wave Cathode Side Cooled 0.0306 0.0302 0.0299 0.0297
Sine wave Double Side Cooled 0.0146 0.0140 0.0136 0.0133
Sine wave Cathode Side Cooled 0.0303 0.0299 0.0296 0.0293
180°
0.0133
0.0292
0.0126
0.0286
270°
0.0128
0.0287
d.c.
0.0125
0.0283
Conduction Angle
Square wave
Sine wave
30°
3.464
3.980
Form Factors
60° 90°
2.449
2
2.778
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT ) + C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A 1.06602
B 0.03035048
C 1.038349 x10-4
D -4.80935 x10-3
125°C Coefficients
A 1.015648
B -0.06011039
C 4.123743 x10-5
D 0.0109963
Data Sheet. Types N3175HE160 to N3175HE180 Issue A2.
Page 4 of 11
December, 2014

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N3175HE180 전자부품, 판매, 대치품
Figure 5 – Recovered Charge, Qrr
100000
N3175HE160-180
Issue A2
Tj=125°C
10000
4000A
3000A
2000A
1000A
Phase Control Thyristor Types N3175HE1600 and N3175HE1800
Figure 6 – Recovered charge, Qra (50% chord)
100000
N3175HE160-180
Issue A2
Tj=125°C
10000
4000A
3000A
2000A
1000A
1000
1000
1
10 100
di/dt (A/µs)
1000
Figure 7 – Reverse recovery current, Irm
10000
N3175HE160-180
Issue A2
Tj=125°C
1000
4000A
3000A
2000A
1000A
100
100
1
10 100
di/dt (A/µs)
1000
Figure 8 – Reverse recovery time, trr (50% chord)
100
N3175HE160-180
Issue A2
Tj=125°C
4000A
10 3000A
2000A
1000A
10
1
10 100
di/dt (A/µs)
1000
1
1 10 100 1000
di/dt (A/µs)
Data Sheet. Types N3175HE160 to N3175HE180 Issue A2.
Page 7 of 11
December, 2014

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