(PDF) BZX55C4V3 Datasheet - Silicon Epitaxial Planar Z-Diodes

Número de pieza	BZX55C4V3
Descripción	Silicon Epitaxial Planar Z-Diodes
Fabricantes	Vishay Telefunken
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No Preview Available ! BZX55C2V4 ~ BZX55C200 VZ : 2.4 - 200 Volts PD : 500 mW FEATURES : * Complete 2.4 to 200 Volts * High surge current capability * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. MECHANICAL DATA Dimensions in inches and ( millimeters ) * Case : Molded glass * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end. When operated in zener mode, cathode will be positive with respect to anode * Mounting position : Any * Weight : 0.13 gram MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation (Note) Maximum Forward Voltage at IF =100 mA Maximum Thermal Resistance Junction to Ambient Air (Note1) Junction Temperature Range Storage Temperature Range Symbol PD VF RθJA Tj Ts Value 500 1.0 0.3 - 55 to + 175 - 55 to + 175 Note : 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Unit mW V K / mW °C °C UPDATE : JANUARY 18, 2002 1 page

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PDF BZX55C4V3 Data sheet ( Hoja de datos )