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PDF BZX55C8V2 Data sheet ( Hoja de datos )
| Número de pieza | BZX55C8V2 | |
| Descripción | SILICON ZENER DIODES | |
| Fabricantes | EIC discrete Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BZX55C8V2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
BZX55C...
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85605
Rev. 4, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
1 page  
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
BZX55C...
Vishay Telefunken
Cathode Identification
∅ 0.55 max.
26 min.
3.9 max.
26 min.
Document Number 85605
Rev. 4, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BZX55C8V2.PDF ] | |
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