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Datasheet BZX84 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX84 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage M3D088
BZX84 series Voltage regulator diodes
Product data sheet Supersedes data of 1999 May 18
2003 Apr 10
NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX84 series
FEATURES
• Total power dissipation: max. 250 mW • Three t | NXP Semiconductors | diode |
2 | BZX84 | Zener Diodes BZX84 Series
Zener Diodes
Vz Range 2.4 to 75V Power Dissipation 300mW TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
Top View
Mounting Pad Layout
0.037 (0.95) 0.037 (0.95)
1
2 max. .004 (0.1)
Dimensions in inches and (millimeters)
0.079 (2.0)
.007 (0.175) .005 (0. | General Semiconductor | diode |
3 | BZX84 | SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES
ISSUE 3 - NOVEMBER 1995 PIN CONFIGURATION
7
BZX84 SERIES C2V7 to C47
1 3 2
!
SOT23
ABSOLUTE MAXIMUM RATINGS (as per Electron Coding Sytem).
PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25°C Operating | Zetex Semiconductors | diode |
4 | BZX84 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26
1999 May 18
Philips Semiconductors
Voltage regulator diodes
Product specification
BZX84 series
FEATURES
• Total power dissipation: max. 250 mW
| Philips | diode |
5 | BZX84-A10 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26 1999 May 18
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Total power dissipation: max. 250 mW • Three to | NXP Semiconductors | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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Número de pieza | Descripción | Fabricantes | |
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