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Número de pieza | BYV72EF | |
Descripción | Rectifier diodes ultrafast/ rugged | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYV72EF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EF series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EF series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.9 V
IO(AV) = 20 A
IRRM = 0.2 A
trr ≤ 28 ns
SOT199
case
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths ≤ 125˚C
BYV72EF
Average rectified output current square wave
(both diodes conducting)1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Ths ≤ 78 ˚C
t = 10 ms
current per diode
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Storage temperature
Operating junction temperature
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-150
150
150
150
-200
200
200
200
20
30
150
160
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
July 1998
1
Rev 1.100
1 page Philips Semiconductors
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
0.7
21.5
max
15.3 max
3.1
7.3 3.3
Product specification
BYV72EF series
5.2 max
3.2
o
6.2 45
5.8
seating
plane
3.5
15.7
min
1
2.1 max
23
1.2
1.0
5.45 5.45
3.5 max
not tinned
0.4 M
0.7 max
2.0
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5 Rev 1.100
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BYV72EF.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYV72EF | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
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