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부품번호 | BYV72EF-150 기능 |
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기능 | Rectifier diodes ultrafast/ rugged | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EF series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EF series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.9 V
IO(AV) = 20 A
IRRM = 0.2 A
trr ≤ 28 ns
SOT199
case
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths ≤ 125˚C
BYV72EF
Average rectified output current square wave
(both diodes conducting)1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Ths ≤ 78 ˚C
t = 10 ms
current per diode
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Storage temperature
Operating junction temperature
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-150
150
150
150
-200
200
200
200
20
30
150
160
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
July 1998
1
Rev 1.100
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
trr / ns
1000
100
10
IF=20A
IF=1A
1
1 10 100
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
1
0.1
IF=20A
IF=1A
0.01
1
10
-dIF/dt (A/us)
100
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
50 IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
0
0
max
0.5 VF / V 1.0
1.5
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Product specification
BYV72EF series
100 Qs / nC
10
IF=20A
10A
5A
2A
1A
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV42F/EX
Fig.11. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
July 1998
4 Rev 1.100
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BYV72EF-150.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
BYV72EF-150 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |