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부품번호 | BYV74 기능 |
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기능 | Dual rectifier diodes ultrafast | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 6 페이지수
Philips Semiconductors
Dual rectifier diodes
ultrafast
Product specification
BYV74 series
GENERAL DESCRIPTION
Glass passivated, high efficiency
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
ultra fast reverse recovery times and
soft recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general, where both low
conduction losses and low switching
losses are essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX.
VRRM
VF
IO(AV)
trr
BYV74-
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
Reverse recovery time
300
300
1.12
30
60
MAX.
400
400
1.12
30
60
MAX.
500
500
1.12
30
60
UNIT
V
V
A
ns
PINNING - SOT93
PIN DESCRIPTION
1 Anode 1 (a)
2 Cathode (k)
3 Anode 2 (a)
tab Cathode (k)
PIN CONFIGURATION
tab
123
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 136˚C
Average output current (both
diodes conducting)1
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Tmb ≤ 94 ˚C
sinusoidal; a = 1.57;
Tmb ≤ 98 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
t = 10 ms
-
-
-
-
-
-
-
-
-
-
-40
-
-300
300
300
300
MAX.
-400
400
400
400
30
27
43
30
150
160
112
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
A
A
A2s
˚C
˚C
1 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200
Philips Semiconductors
Dual rectifier diodes
ultrafast
50 IF / A
Tj = 25 C
Tj = 150 C
40
BYV74
30
typ max
20
10
0
0 0.5 1 1.5 2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
1000
100
10
IF = 20 A
2A
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C; per diode
Product specification
BYV74 series
Zth (K/W)
10
1
0.1 D tp
t
0.01
10 us
1 ms
tp / s
0.1
10 s
Fig.9. Transient thermal impedance per diode
Zth j-mb= f(tp)
August 1996
4
Rev 1.200
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BYV74.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BYV72EF | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
BYV72EF-150 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |