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부품번호 | BYV74F-400 기능 |
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기능 | Dual rectifier diodes ultrafast | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
Dual rectifier diodes
ultrafast
Product specification
BYV74F series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV74F series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab isolated
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
VF ≤ 1.12 V
IO(AV) = 20 A
trr ≤ 60 ns
SOT199
case
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
Tstg
Tj
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 117˚C
BYV74F
Average rectified output current square wave; δ = 0.5;
(both diodes conducting)1
Ths ≤ 54 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Ths ≤ 54 ˚C
t = 10 ms
current per diode.
t = 8.3 ms
sinusoidal; with reapplied
Storage temperature
VRRM(max)
Operating junction temperature
-
-
-
-
-
-
-
-40
-
-300
300
300
300
MAX.
-400
400
400
400
20
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- - 2500 V
- 22 - pF
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
Philips Semiconductors
Dual rectifier diodes
ultrafast
50 IF / A
Tj = 25 C
Tj = 150 C
40
BYV74
30
typ max
20
10
0
0 0.5 1 1.5 2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
1000
100
10
IF = 20 A
2A
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C; per diode
Product specification
BYV74F series
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV42F/EX
Fig.9. Transient thermal impedance per diode
Zth j-hs= f(tp)
September 1998
4
Rev 1.300
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BYV74F-400.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BYV74F-400 | Dual rectifier diodes ultrafast | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |