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부품번호 | BYV79E-200 기능 |
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기능 | Rectifier diodes ultrafast/ rugged | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 6 페이지수
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79E series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
a
2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
tab cathode
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.9 V
IF(AV) = 14 A
IRRM ≤ 0.2 A
trr ≤ 30 ns
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 145˚C
BYV79E
IF(AV)
Average forward current1
square wave
δ = 0.5; Tmb ≤ 120 ˚C
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5;
Tmb ≤ 120 ˚C
IFSM Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRSM Non-repetitive peak reverse tp = 100 µs
current
Tstg Storage temperature
Tj Operating junction temperature
1. Neglecting switching and reverse current losses.
-
-
-
-
-
-
-
-
-
-40
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
14
28
150
160
UNIT
V
V
V
A
A
A
A
0.2 A
0.2 A
150 ˚C
150 ˚C
MIN.
-
MAX.
8
UNIT
kV
July 1998
1 Rev 1.200
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79E series
trr / ns
1000
100
10
IF=10A
IF=1A
1
1 10
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C.
100
Irrm / A
10
1
0.1
IF=10A
IF=2A
0.01
1
10
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C.
100
60 IF / A
Tj = 150 C
50
Tj = 25 C
40
30
20
typ
10
max
0
0
0.5 1.0
1.5
VF / V
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1000 Qs / nC
100
10
IF=10A
5A
2A
1.0
1.0
10
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C.
100
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s
pulse width, tp (s)
BYV79E
10s
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
July 1998
4 Rev 1.200
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BYV79E-200.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BYV79E-200 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |