|
|
|
부품번호 | BYV79EB-200 기능 |
|
|
기능 | Rectifier diodes ultrafast/ rugged | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 7 페이지수
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
a
3
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79EB series is supplied in
the surface mounting SOT404
package.
PINNING
PIN DESCRIPTION
1 no connection
2 cathode 1
3 anode
tab cathode
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.9 V
IF(AV) = 14 A
IRRM = 0.2 A
trr ≤ 30 ns
SOT404
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 145˚C
BYV79EB
IF(AV)
Average rectified forward
current 2
square wave
δ = 0.5; Tmb ≤ 120 ˚C
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Tmb ≤ 120 ˚C
IFSM Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRSM Non-repetitive peak reverse tp = 100 µs
current
Tstg Storage temperature
Tj Operating junction temperature
1. It is not possible to make connection to pin 2 of the SOT404 package
2. Neglecting switching and reverse current losses.
-
-
-
-
-
-
-
-
-
-40
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
14
28
150
160
UNIT
V
V
V
A
A
A
A
0.2 A
0.2 A
150 ˚C
150 ˚C
MIN.
-
MAX.
8
UNIT
kV
July 1998
1 Rev 1.100
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
trr / ns
1000
100
10
IF=10A
IF=1A
1
1 10
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C.
100
Irrm / A
10
1
0.1
IF=10A
IF=2A
0.01
1
10
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C.
100
60 IF / A
Tj = 150 C
50
Tj = 25 C
40
30
20
typ
10
max
0
0
0.5 1.0
1.5
VF / V
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1000 Qs / nC
100
10
IF=10A
5A
2A
1.0
1.0
10
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C.
100
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s
pulse width, tp (s)
BYV79E
10s
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
July 1998
4 Rev 1.100
4페이지 Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7 Rev 1.100
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ BYV79EB-200.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BYV79EB-200 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |