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PDF BYZ50K39 Data sheet ( Hoja de datos )
| Número de pieza | BYZ50K39 | |
| Descripción | Silicon Protectifiers with TVS characteristics High-temperature diodes | |
| Fabricantes | Diotec Semiconductor | |
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Silicon Protectifiers
with TVS characteristics
High-temperature diodes
BYZ 50A22 ... BYZ 50A47
BYZ 50K22 ... BYZ 50K47
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
Ø 12.75
Ø 11 ±0.1
1.3
Ø 13 ±01
Dimensions / Maße in mm
Nominal current – Nennstrom
50 A
Nominal breakdown voltage
Nominale Abbruch-Spannung
19.8 ... 51.7 V
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
BYZ 50A22
BYZ 50A27
BYZ 50A33
BYZ 50A39
BYZ 50A47
Cathode
BYZ 50K22
BYZ 50K27
BYZ 50K33
BYZ 50K39
BYZ 50K47
Breakdown voltage
Abbruch-Spannung
IT = 100 mA
VBRmin [V] VBRmax
19.8 24.2
24.3 29.7
29.7 36.3
35.1 42.9
42.3 51.7
Reverse voltage
Sperrspannung
IR = 5 :A
VR [V]
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
Grenzwerte
Max. clamping voltage
Max. Begrenzerspanng.
at / bei IPP, tp = 1m s
VC [V]
IPP [A]
31,9 242
39,1 192
47,7 160
56,4 134
67,8 112
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150/C
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t <10 ms
TA = 25/C
Forward voltage – Durchlaßspannung
Tj = 25/C IF = 50 A
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IFAV 50 A
IFSM 400 / 450 A
i2t 800 A2s
VF < 1.1 V
Tj – 50…+215/C
TS – 50…+215/C
04.09.2002
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BYZ50K39.PDF ] | |
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