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BUK108-50GS 데이터시트 PDF




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부품번호 BUK108-50GS 기능
기능 PowerMOS transistor TOPFET
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BUK108-50GS 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
DESCRIPTION
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic surface mount
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 10 V
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
15
40
150
100
UNIT
V
A
W
˚C
m
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT404
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb D
TOPFET
2
13
I
P
S
June 1996
1
Rev 1.000




BUK108-50GS pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VIS(TO)
IIS
VISR
VISR
IISL
V(BR)IS
RIG
Input threshold voltage
Input supply current
Protection reset voltage1
Protection reset voltage
Input supply current
Input clamp voltage
Input series resistance
VDS = 5 V; ID = 1 mA
VIS = 10 V; normal operation
Tj = 150 ˚C
VIS = 10 V; protection latched
II = 10 mA
to gate of power MOSFET
1.0 1.5 2.0 V
- 0.4 1.0 mA
2.0 2.6 3.5 V
1.0 -
-
1.0 2.5 5.0 mA
11 13
-
V
- 4 - k
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
gfs Forward transconductance
ID(SC)
Drain current2
CONDITIONS
VDS = 10 V; IDM = 7.5 A tp 300 µs;
δ ≤ 0.01
VDS = 13 V; VIS = 10 V
MIN. TYP. MAX. UNIT
59 -S
- 40 -
A
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 . Refer to waveform figures and test circuits.
SYMBOL PARAMETER
CONDITIONS
td on Turn-on delay time
tr Rise time
td off Turn-off delay time
tf Fall time
td on Turn-on delay time
tr Rise time
td off Turn-off delay time
tf Fall time
VDD = 13 V; VIS = 10 V
resistive load RL = 4
VDD = 13 V; VIS = 0 V
resistive load RL = 4
VDD = 13 V; VIS = 10 V
inductive load IDM = 3 A
VDD = 13 V; VIS = 0 V
inductive load IDM = 3 A
MIN.
-
-
-
-
-
-
-
-
TYP.
1
4
10
5
1
0.5
15
0.5
MAX.
-
-
-
-
-
-
-
-
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS Continuous forward current
CONDITIONS
Tmb 25 ˚C; VIS = 0 V
MIN.
-
MAX.
15
UNIT
A
1 The input voltage below which the overload protection circuits will be reset.
2 During overload before short circuit load protection operates.
June 1996
4
Rev 1.000

4페이지










BUK108-50GS 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
td sc / ms
100
BUK108-50GS
10
PDSM
1
0.1
0.01
0.1
PDS / kW
1
Fig.12. Typical overload protection characteristics.
td sc = f(PDS); conditions: VIS 5 V; Tj = 25 ˚C.
PDSM%
120
100
80
60
40
20
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised limiting overload dissipation.
PDSM% =100PDSM/PDSM(25 ˚C) = f(Tmb)
Energy & Time
1
BUK108-50GS
Time / ms
0.5
Energy / J
Tj(TO)
ID / A
20
BUK108-50GS
15
typ.
10
5
0
50
60
VDS / V
70
Fig.15. Typical clamping characteristics, 25 ˚C.
ID = f(VDS); conditions: VIS = 0 V; tp 50 µs
VIS(TO) / V
2
1
max.
typ.
min.
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.16. Input threshold voltage.
VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V
II / mA
1.0
BUK108-50GS
0.5
0
-60 -20 20
60 100 140 180 220
Tmb / C
Fig.14. Typical overload protection characteristics.
Conditions: VDD = 13 V; VIS = 10 V; SC load = 30 m
0
0
Fig.17.
2 4 6 8 10 12 14
VIS / V
Typical DC input characteristics, Tj = 25 ˚C.
IIS = f(VIS); normal operation
June 1996
7
Rev 1.000

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