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PDF BUK109-50GS Data sheet ( Hoja de datos )
| Número de pieza | BUK109-50GS | |
| Descripción | PowerMOS transistor TOPFET | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
DESCRIPTION
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic surface mount
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 10 V
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
29
75
150
50
UNIT
V
A
W
˚C
mΩ
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT404
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb D
TOPFET
2
13
I
P
S
June 1996
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
CONDITIONS
VSDS
trr
Forward voltage
Reverse recovery time
IS = 29 A; VIS = 0 V; tp = 300 µs
not applicable1
MIN.
-
-
TYP. MAX. UNIT
1.0 1.5 V
---
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
MIN. TYP. MAX. UNIT
- 2.5 - nH
- 7.5 - nH
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
ID & IDM / A
1000
BUK109-50GS
Overload protection characteristics not shown
100 RDS(ON) = VDS/ID
tp =
10 us
100 us
10
DC
1 ms
10 ms
100 ms
1
1
10 100
VDS / V
Fig.4. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.3. Normalised continuous drain current.
ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
Zth / (K/W)
10
BUK109-50GS
D=
1 0.5
0.2
0.1
0.1 0.05
0.02
PD tp
D=
tp
T
0.01
0
1E-07
1E-05
1E-03
t/s
T
1E-01
t
1E+01
Fig.5. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
5
Rev 1.000
5 Page 
Philips Semiconductors
PowerMOS transistor
TOPFET
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Product specification
BUK109-50GS
10.3 max
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.32. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
Notes
1. Plastic meets UL94 V0 at 1/8".
5.08
Fig.33. SOT404 : minimum pad sizes for surface mounting.
June 1996
11
Rev 1.000
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUK109-50GS.PDF ] | |
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